STF100N6F7

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STF100N6F7 is complementary metaloxide semiconductor (CMOS) insulated gate field-effect transistor (IGFET) device. It is atype of silicon-gate MOSFET, with a drain-source breakdown voltage of 100V, a maximum drain current of 50A, and a maximum drain-source on-state resistance of 0.02Ohm. This device is used for high voltage, high current applications.

The STF100N6F7 is a “n-channel enhancement type” MOSFET. This means it is operated by a positive gate-source voltage (VGS) and requires no external gate current to turn on. The straight voltage marks the drain-source voltage to turn on and works in “ enhancement” mode. In other words, the positive gate-source voltage (VGS) is applied to turn it “ON”.

The working principle of STF100N6F7 works on a basic idea of capacitance. A capacitance is formed between the gate of the MOSFET and the drain, which helps regulate the current flow through the device. When a positive gate-source voltage is applied, the gate-drain capacitance starts to enhance, resulting in a large drain-source current. Since the STF100N6F7 has a lower drain-source resistance (RDS), it has a higher current carrying capability than similar devices.

The STF100N6F7 can be used in various applications that require a higher current flow with a low-voltage drop across the drain and source. Examples include power applications such as even motors, DC-DC converters, and AC mains power supplies. Additionally, this device can be used in multiple power switching applications such as switching-mode power supplies (SMPS). The device’s features, such as low on-state resistance and high body-drain breakdown voltage, make it suitable for applications related to automotive and consumer electronics, as well.

In conclusion, STF100N6F7 is a type of insulated gate field-effect transistor (IGFET) device which is mainly used in high voltage, high capacity applications. It is a “n-channel enhancement type” MOSFET with a drain-source breakdown voltage of 100V, a maximum drain current of 50A, and a maximum drain-source on-state resistance of 0.02Ohm. The working principle of STF100N6F7 is based on the basic idea of capacitance and works by enhancing the gate-drain capacitance, resulting in a large drain-source current. The device can be used in applications related to automotive electronics, consumer electronics, power supplies, and many others, due to its high reliability and low on-state resistance.

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