STF10N60DM2 Allicdata Electronics
Allicdata Part #:

497-16959-ND

Manufacturer Part#:

STF10N60DM2

Price: $ 1.33
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: N-CHANNEL 600 V, 0.26 OHM TYP.,
More Detail: N-Channel 600V 8A (Tc) 25W (Tc) Through Hole TO-22...
DataSheet: STF10N60DM2 datasheetSTF10N60DM2 Datasheet/PDF
Quantity: 1841
1 +: $ 1.20960
10 +: $ 1.07352
100 +: $ 0.84848
500 +: $ 0.65800
1000 +: $ 0.51947
Stock 1841Can Ship Immediately
$ 1.33
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: MDmesh™ DM2
Rds On (Max) @ Id, Vgs: 530 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STF10N60DM2 is a MOSFET transistor in a SOT-227B package and has a drain current of 10A and a voltage rating from -60V to 300V. It is a popular component in both analog and digital circuit design. This article will discuss the application field and working principle of the STF10N60DM2.

Applications

The STF10N60DM2 is a general-purpose transistor, and is suitable for applications such as switching, power control, rectification, and inverting. It can be used in circuits that require high switching speeds, high breakdown voltages, and high power handling capabilities. As such, the STF10N60DM2 is often used in automotive systems, HVAC systems, and industrial power converters.

The STF10N60DM2 is also commonly used in audio amplifier circuits. Its high power handling capabilities make it an ideal choice for applications that require both high current and large voltage swings. In addition, its low reverse leakage currents aid in improving the power efficiency of these audio amplifier circuits.

Finally, the STF10N60DM2 can be used for high frequency switching in power supplies. Its excellent high frequency switching characteristics make it suitable for these types of applications.

Working Principle

The STF10N60DM2 is a metal-oxide-semiconductor field-effect transistor (MOSFET). It is made using an insulated gate and is used to control the current flow between its source and drain terminals. The amount of current that flows between the two terminals is determined by the voltage at the gate, which is used to control the resistance of the MOSFET.

When the voltage at the gate is low, the resistance of the MOSFET is high, so the current flow is limited. Conversely, when the voltage at the gate is high, the resistance of the MOSFET is low, so the current flow is increased. This is how the STF10N60DM2 is used to control the current flow in a circuit.

The STF10N60DM2 also has several other features that make it suitable for use in power control applications. Its low gate charge, low on-state resistance, and low switching losses make it an ideal choice for power supplies and other power control circuits.

In conclusion, the STF10N60DM2 is a widely used MOSFET in analog and digital circuit design. It has a wide range of applications, including power control and audio amplifiers, as well as high frequency switching in power supplies. Its excellent features, such as its low gate charge, low on-state resistance, and low switching losses, make it suitable for these types of applications. This article has provided a brief overview of the application field and working principle of the STF10N60DM2.

The specific data is subject to PDF, and the above content is for reference

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