STF12N60M2

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STF12N60M2 is a MOSFET type device designed by STMicroelectronics, viewed as a power semiconductor. This MOSFET is applicable in a wide range of application fields, where an efficient, reliable and cost-efficient power conversion is required. Examples include power factor correction (PFC), boost converters, half-wave rectifier and full-wave rectifier, inverters and motor control.

The STF12N60M2 MOSFET works on the principle of threshold switching. When the applied gate voltage exceeds the threshold voltage VTH, the device switches from a ‘cut-off’ (or linear) state to an ‘ON’ (or saturation) state. In the ‘ON’ state, the Drain-Source voltage (VDS) across the MOSFET is close to zero as the channel has been fully turned on. If the channel is completely off, then IDS becomes equal to ≈ 0, meaning the device is in the linear (or cut-off) state.

The gate-source capacitance of the STF12N60M2 MOSFET is much less than that of a regular MOSFET. This makes it highly suitable for high-frequency applications like Full bridge switch or Push pull converters. The gate driver of the STF12N60M2 is designed to reduce capacitive noise violations, allowing the applied voltage to reach the device quickly and switch off faster.

The STF12N60M2 MOSFET is specially optimized to reduce switching losses from 4ns to 200ns, resulting in lower switching losses and higher energy efficiency. It also features a low ‘ON’ resistance of 8mΩ. This feature provides the device with improved current-handling capabilities, making it suitable for higher switching frequencies and higher bus voltages. The device also features an enhanced temperature derating, with an operating temperature range of -55°C to 175°C.

In conclusion, the STF12N60M2 MOSFET is a highly efficient and reliable power semiconductor device, which is suitable for a wide range of applications ranging from power factor correction to motor control. It works on the principle of threshold switching and features a low ‘ON’ resistance of 8mΩ, as well as a low gate-source capacitance, making it ideal for high-frequency applications. It also features enhanced temperature derating and lower switching losses, resulting in higher energy efficiency.

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