STF14N80K5

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The STF14N80K5 is an N-channel, 500V, 8A, 2.5ohm maximum RDS(on) power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with SuperMESH technology. It is a part of STMicroelectronics\' STD1400 family of MOSFETs. It is a single part, with a drain-source voltage rating of 500 V, a drain current rating of 8 A, a maximum Rdson of 2.5 ohms, and a limited operating temperature range of -55 to 150 °C.

The STF14N80K5 is commonly used in automotive, consumer electronics and industrial Power switching applications. These applications require efficient and reliable semiconductor devices as they are exposed to extreme temperatures, heavy vibrations, and other harsh environmental conditions. Its unique SuperMESH structure helps reduce switching losses, improve thermal performance and extend lifetime.

The basic structure of the STF14N80K5 MOSFET is two joined channels separated by a silicon dioxide insulating layer and surrounded by a metal gate. When voltage is applied to the gate, a leakage current flows between the joined channels. When the gate voltage reaches a certain level, the conductivity of the device increases and a current can freely flow between the two channels. This allowed current is proportional to the applied gate voltage.

The STF14N80K5\'s SuperMESH structure consists of multiple sloped profiles extending across the gate area and connecting to the source area. This allows for a low on-resistance, improved gate charge, greater gate stress tolerance and increased packaging density. This makes the device ideal for a wide range of applications where fast switching speed, low power losses and long lifetime are important.

The STF14N80K5’s SuperMesh structure works by providing multiple current paths that enable a faster current rise time. This allows for faster switching and improved switching efficiency, reduced drive requirements and improved power transfer. Additionally, the SuperMesh structure helps minimize the gate charge, which helps reduce switching losses, thermal dissipation and power consumption.

A few of the other features provided by the STF14N80K5 include a robust logic-level gate drive with a 5V signal, improved thermal performance, a wide temperature range and superior noise immunity. Thanks to its superior thermal performance, the device can run at high operating temperature with minimal power dissipation, thus making it one of the most efficient MOSFETs available on the market.

In summary, the STF14N80K5 is an N-channel power MOSFET with a 500V rating, 8A drain current, a 2.5ohm maximum RDS(on) and SuperMESH technology. It is especially suited for automotive, consumer electronics and industrial power switching applications due to its robustness, improved thermal performance and efficient power transfer. Its SuperMESH structure improves switching efficiency and reduces switching losses, thus making it very ideal for high power switching applications.

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