STF20N65M5

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The STF20N65M5 is a STMicroelectronics advanced more-oxide-semiconductor field-effect transistor (MOSFET) designed for high power switchmode applications. It is a N-channel device with a rating of -55V drain to source voltage (VDS) and a maximum drain current of 45A. It features a maximum junction temperature of 175°C and a maximum gate charge of 69nC.

The STF20N65M5 is ideal for use in metal-oxide-semiconductor (MOS) inverters, motor drives, and in radiation-hardened 7.0V to 15.0V power supplies, from which it derives its name. The device’s low on-state resistance (RDS(on)) helps reduce power losses, even at high frequency switching, enabling superior overall system efficiency.

The STF20N65M5 is built on a proprietary process technology that is optimized for low on-state resistance, reducing device power losses, increasing efficiency and gate drive requirements. The STF20N65M5 incorporates proprietary enhancement technology that results in excellent gate charge characteristics, enabling operation with low gate voltages.

The STF20N65M5 has an operating temperature range of -55°C to 175°C, making it well-suited for extreme environments, such as automotive, aerospace, industrial and medical applications. The device also includes a number of protection features, such as over-current, over-voltage and over-temperature protection, providing engineers with useful protection against fault conditions.

The STF20N65M5 is a highly advanced device. It features a low on-state resistance, allowing it to achieve high efficiency with low power losses. The device has an operating temperature range of -55°C to 175°C, making it well-suited for harsh environments. Additionally, the device is designed with several protective features, providing engineers with important safeguards against fault conditions. In summary, the STF20N65M5 is an ideal solution for high power switchmode applications, providing superior system efficiency and reliable protection.

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