Allicdata Part #: | 497-11394-5-ND |
Manufacturer Part#: |
STF24NM65N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 19A TO-220FP |
More Detail: | N-Channel 650V 19A (Tc) 40W (Tc) Through Hole TO-2... |
DataSheet: | STF24NM65N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 9.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STF24NM65N is a single-channel, metal-oxide semiconductor field-effect transistor (MOSFET), which is designed primarily for switching applications. It is a compact, yet powerful device that is capable of withstanding high voltage, temperature and power levels. The STF24NM65N is used in a wide range of applications, including power electronics, motor drives, battery management systems, automotive systems and other industrial applications.
The STF24NM65N is an N-type MOSFET, which is designed to operate on high voltage, low voltage and low-current applications. The device is characterized by its low on-resistance, high switching speed and low gate drive requirements. It has excellent ESD performance, making it suitable for high-sensitive applications. The device also features a wide range of package options, allowing for easy design integration and scalability.
The STF24NM65N features a high-speed N-Channel MOSFET, built for power applications. The device features an internal source-drain diode, allowing for fast switching operations. It also offers very low on-resistance at higher safe operating area (SOA) and high avalanche immunity. The device is also on-chip protected with a thermal shut-down switch, which allows for thermal derating of gate drive.
The working principle of the STF24NM65N is similar to other types of MOSFETs. It operates by using an electric field to modulate the type of charge encountered when a current travels through the device. A MOSFET consists of three regions: the source, the drain and the gate. A voltage is applied to the gate, which in turn creates an electric field. This electric field affects the movement of electrons resulting in the flow of current across the device.
The STF24NM65N is an ideal choice for many different types of applications. It is perfect for high-end applications such as motor drives and power electronics where reliability and performance are paramount. It is also suitable for automotive applications such as battery management systems and ignition and fuel injection systems, as well as industrial applications.
In conclusion, the STF24NM65N is an ideal single-channel MOSFET for a wide range of applications. It features a high-speed N-channel design, which provides excellent switching characteristics, along with low on-resistance and low gate drive requirements. It also offers thermal protection, making it suitable for power applications. Furthermore, the device is versatile and reliable, making it a great choice for any application.
The specific data is subject to PDF, and the above content is for reference
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