Allicdata Part #: | 497-4803-5-ND |
Manufacturer Part#: |
STF21NM50N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 18A TO220FP |
More Detail: | N-Channel 500V 18A (Tc) 30W (Tc) Through Hole TO-2... |
DataSheet: | STF21NM50N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1950pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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STF21NM50N is a N-channel enhancement mode Field Effect Transistor (FET) designed specifically for power applications. With 500 volts of drain source breakdown voltage, 20 volts of gate source breakdown voltage and 5.6 amps drain current, STF21NM50N is a great option for using in power applications. This FET is also popular for use in high-frequency and high-efficiency applications.
The main application fields for STF21NM50N are power conversion, motor control, switching and power management. It is mainly used in electric motor control and high frequency switching. It finds applications in power converters, motor control, converters, UPS systems and various power management applications. It is suitable for use in harsh industrial environment that requires a high degree of reliability, long life and high performance.
The working principle of STF21NM50N is similar to any other FETs. It consists of a source region, a drain region and a gate region separated by an insulating layer of gate dielectric. The drain and source regions are connected to the terminals of the FET, while the terminals of the gate region are connected to the appropriate control signal. The working principle of STF21NM50N is based on the principle of the electric field. A potential applied to the gate leads to the formation of a narrow depletion layer at the interface between the gate dielectric and the channel region, and thus modulates the conductivity of the channel. When the gate potential is low, the depletion layer extends into the channel, thereby reducing the conductivity. However, when a higher gate potential is applied, the depletion layer shrinks, and the conductivity of the channel is increased. This action is referred to as the enhancement mode, and is the main working principle of STF21NM50N.
In conclusion, STF21NM50N is a N-channel enhancement mode Field Effect Transistor that is mainly used in power conversion, motor control, switching and power management applications. It features 500 volts of drain source breakdown voltage and 5.6 amps drain current, and is suitable for use in harsh industrial environment. It works by modulating the conductivity of the channel by applying a potential to the gate. All these features make STF21NM50N a great choice for power applications.
The specific data is subject to PDF, and the above content is for reference
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