| Allicdata Part #: | STF23NM60ND-ND |
| Manufacturer Part#: |
STF23NM60ND |
| Price: | $ 2.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 19.5A TO-220FP |
| More Detail: | N-Channel 600V 19.5A (Tc) 35W (Tc) Through Hole TO... |
| DataSheet: |  STF23NM60ND Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 1.86631 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 35W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2050pF @ 50V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| Series: | FDmesh™ II |
| Rds On (Max) @ Id, Vgs: | 180 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 19.5A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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STF23NM60ND Application Field and Working Principle:
The STF23NM60ND is a high performance n-channel enhancement mode power MOSFET, which is designed and produced using advanced FET technology. The STF23NM60ND can be used in both DC and AC applications. It is suitable for use in a wide variety of automotive, industrial, and consumer electronic applications.
The STF23NM60ND consists of an n-channel FET, insulated gate, three source and drain terminals and an integrated gate resistor. This device has two types of transconductance, which is defined as the ratio of the output current to the input voltage. The transconductance of the STF23NM60ND is 48mS (at Vgs of -3V) and 125mS (at Vgs of 6V). This suggests that the device can switch at higher voltage than the conventional devices. It is also suitable for use in low-Vgs conditions, such as in low-efficiency applications, where a large gate voltage is needed to get the desired gate current.
The STF23NM60ND has an excellent thermal resistance, which helps to ensure efficiency and reliability. The design of the thermal resistance helps to dissipate heat more efficiently in order to reduce the heat generation in the device. The STF23NM60ND also has an good ESD (Electrostatic Discharge) protection, which helps to protect it from static electricity. This can be important in high-voltage applications, such as in automotive applications.
The STF23NM60ND can be used in a variety of applications such as automotive, lighting, home appliance, energy efficiency and medical electronics. It can be used in applications where high-efficiency and high-frequency voltage controllers are needed, as well as in systems with high power switching. The STF23NM60ND can also be used in applications where high-voltage and low-power levels are required, such as in low frequency switching applications. The device can also be used in applications where a high speed level shifter is needed.
The working principle of the STF23NM60ND is based on the application of electric fields on a metal oxide semiconductor (MOS) gate. The MOS gate consists of two layers of oppositely charged silicon as a dielectric. When a voltage is applied to the gate, the electric field created causes the charges to flow from one layer to another. This causes a difference in the potential of the metal oxide layers, resulting in current flow through the device. The STF23NM60ND is able to switch the output voltage of the device based on the applied potential, which allows it to be used for power switching applications.
The specific data is subject to PDF, and the above content is for reference
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