STF27N60M2-EP Allicdata Electronics
Allicdata Part #:

497-16487-5-ND

Manufacturer Part#:

STF27N60M2-EP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 20A TO-220FP
More Detail: N-Channel 600V 20A (Tc) 30W (Tc) Through Hole TO-2...
DataSheet: STF27N60M2-EP datasheetSTF27N60M2-EP Datasheet/PDF
Quantity: 622
Stock 622Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: MDmesh™ M2-EP
Rds On (Max) @ Id, Vgs: 163 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STF27N60M2-EP is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). As an enhancement-mode device, its operating principle is such that an applied voltage at the gate terminal increases current flow between the source and drain. As such, it is used mainly as an electronic switch or amplifier.

The STF27N60M2-EP is a high-speed n-channel device with a low static drain-source on-resistance when compared to competing devices. This is made possible by its trench structure, which includes a number of innovations such as self-aligned dielectric breakdown and electrostatic protection.

The STF27N60M2-EP is suitable for a variety of applications, from power management and motor control to telecommunications infrastructure and consumer electronics. With its wide range of drain-source and gate-source voltages, it provides reliable switching and amplifying performance in a diverse array of applications.

In addition to its wide range of voltage and current ratings, the STF27N60M2-EP also features excellent surge and ESD protection. This is made possible by its advanced trench technology, which increases its breakdown voltage and current capability. Its high switching speed and reduced capacitance also contributes to its superior performance in high-speed applications.

The STF27N60M2-EP is a versatile device, capable of handling power and signal guidance and control in demanding environments. Its low RDS(ON) and high drain-source breakdown voltage make it ideal for power management, while its excellent on-resistance and fast switching speed make it suitable for switching and amplifying applications. It also features integrated protection functions, making it a reliable and cost-effective choice for many applications.

Overall, the STF27N60M2-EP is an excellent choice for a variety of applications, from power management and motor control to telecom infrastructure and consumer electronics. Its low RDS(ON) and high-drain-source breakdown voltage make it ideal for power management, while its fast switching speed and integrated protection functions make it a reliable and cost-effective choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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