Allicdata Part #: | 497-15886-5-ND |
Manufacturer Part#: |
STF25N60M2-EP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 18A EP TO220FP |
More Detail: | N-Channel 600V 18A (Tc) 30W (Tc) Through Hole TO-2... |
DataSheet: | STF25N60M2-EP Datasheet/PDF |
Quantity: | 711 |
Vgs(th) (Max) @ Id: | 4.75V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1090pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | MDmesh™ M2-EP |
Rds On (Max) @ Id, Vgs: | 188 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STF25N60M2-EP is a single configuration of a power field effect transistor (PFET) designed by ST Microelectronics. This type of transistor is also known as a MOSFET, or metal-oxide semiconductor field-effect transistor. It has a high-current carrying capacity and is used in multiple application fields to boost the power during high frequency applications. This article will discuss the application fields of the STF25N60M2-EP MOSFET and its working principle.
Application Fields of the STF25N60M2-EP Power MOSFET
The STF25N60M2-EP MOSFET is suitable for a variety of power based applications and situations. These include power supplies, inverters, UPS systems, switching power converters, and motor drives. It is suitable for a variety of industrial applications, including the automation, telecom and computer industries. Additionally, it is suitable for appliance applications, such as air conditioners, refrigerators and washing machines. Not only is it suitable for applications on AC and DC voltage systems, but it can also be used in pulsed systems as well. As such, it is a suitable choice of a power MOSFET for a variety of applications.
Working Principle of the STF25N60M2-EP Power MOSFET
The STF25N60M2-EP MOSFET is used as a power device due to its low on-state resistance and high-frequency performance. At its core, it is based upon the principle of MOSFETs, which works in a similar way to a standard transistor. The device is constructed from a channel of semiconducting material (typically silicon) between two electrodes, or gates. A voltage is applied to the gates, which in turn creates a field across the channel that allows current to flow. Depending on the voltage, the amount of current flowing through the channel can be controlled. Additionally, the STF25N60M2-EP MOSFET also has additional features to enhance the performance of the device, including a low on-state resistance, higher voltage withstand capability, protection against electrostatic discharge and more.
MOSFETs are used in a variety of applications due to their versatility and ease of use. They can be used in power supplies, inverters, UPS systems, switching power converters, motor drives and more. They are particularly useful in applications where more power needs to be delivered in a limited space. As such, the STF25N60M2-EP MOSFET can be used in a wide range of applications, from industrial automation to household appliances.
The STF25N60M2-EP is an excellent choice of MOSFET for power applications. It has a high-current carrying capacity and a low on-state resistance. This allows it to be used in a wide range of applications, such as power supplies, inverters, UPS systems, switching power converters, and motor drives. Additionally, it is protected against electrostatic discharge and has a higher voltage withstand capability. As such, the STF25N60M2-EP is a versatile choice of MOSFET that can be used in various application fields.
The specific data is subject to PDF, and the above content is for reference
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