Allicdata Part #: | 497-4340-5-ND |
Manufacturer Part#: |
STF20NF06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 60V 20A TO220FP |
More Detail: | N-Channel 60V 20A (Tc) 28W (Tc) Through Hole TO-22... |
DataSheet: | STF20NF06 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STF20NF06 are comprehensive N-Channel enhancement mode MOSFETs. The devices come in TO-252 (DPAK) surface mount packages and each of them provides excellent RDS(on) and low gate charge resulting in decreased power consumption and increased system efficiency. The STF20NF06 are suitable for use in power supplies, interoperability, telecommunication, control circuits, variable switching, DC-DC converters, UPS, and portable electronic equipment.
The main feature of this MOSFETs is that their gate threshold voltage is extremely low meaning that their conduction angle is low. This results in high switching speed as well as fast turn-on and turn-off times. With an RDS(on) of 5 milliohms, it means less heat generation for power convergence, providing greater efficiency in DC to DC operation at medium to high frequencies. In addition, since these transistors come in surface mount packages, they are ideally suited for applications in tight areas where conventional through-hole components cannot be used.
The working principle of the STF20NF06 MOSFET is based on the basic principles of MOSFETs which utilizes electrical current and voltage to control the flow of charge carriers, in particular electrons and holes. As the MOSFET is based on a metal-oxide-semiconductor layer, current flows through the channel that is between the source and drain when a gate voltage is applied. This will cause the MOSFET to conduct, allowing current to flow from the drain to the source. By controlling the gate voltage, the MOSFETs can be used to switch voltages and currents with maximum efficiency.
The STF20NF06 MOSFETs are a great choice for designing efficient systems with minimized loss. With their low gate charge and RDS(on), they can provide precise switching control and low heat generation. These transistors are also highly reliable, making them suitable for use in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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