STF22NM60N

Vgs(th) (Max) @ Id:	4V @ 100µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1300pF @ 50V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	44nC @ 10V
Series:	MDmesh™ II
Rds On (Max) @ Id, Vgs:	220 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	16A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The STF22NM60N is a silicon, N-channel MOSFET transistor. It is a high-voltage transistor with a drain-source voltage (VDS) rating of 600 volts and a drain current (ID) rating of 22 amps. It is designed to operate at low voltages with high efficiency and low on-resistance.The STF22NM60N is a single N-channel MOSFET transistor and is usually used in power supply circuits with high current and high voltage ratings. In such circuits, the N-channel MOSFETs act as switches, allowing the flow of current through the circuit when the switch is open and stopping the flow of current when the switch is closed. This switching action is referred to as "pulsing" because the current is periodically turned on and off. The on and off switching of the N-channel MOSFETs also allows for a controlled flow of current through the circuit.The STF22NM60N is a versatile transistor and can be used in a variety of applications such as AC and DC motor control applications, voltage regulation, DC to DC converters, switching power supplies, and low-voltage power supplies. The main advantages of using the STF22NM60N in these applications are its low on-resistance, high-voltage rating, and high efficiency. The low on-resistance allows for high current ratings and low losses. The high-voltage rating ensures that the MOSFET transistor can handle the high voltages used in these applications. The high efficiency of the transistor means that the power consumption is reduced and the performance of the circuit is improved.The working principle of the STF22NM60N is based on the principle of the MOSFET transistor. In this type of transistor, the gate voltage is used to control the current flowing through the channel between the source and drain. When a gate voltage is applied, it repels electrons from the channel and thus blocks the current. When the gate voltage is removed, the current can flow freely through the channel. This principle is used in power supplies and switch-mode power supplies, where the applied gate voltage is modulated to control the current in the circuit.In summary, the STF22NM60N is a versatile N-channel MOSFET transistor that is designed to fulfill a wide range of applications. It has a high-voltage rating, low on-resistance, and high efficiency. It also works on the principle of the MOSFET transistor, which allows it to be used in various circuits and switch-mode power supplies.

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