STF28N60DM2

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STF28N60DM2 is a type of insulated-gate bipolar transistor (IGBT) that belongs to a family of metal oxide semiconductor field-effect transistors (MOSFETs). The STF28N60DM2 is a single MOSFET made from N-channel MOSFETs. It is designed for use in high power applications with high-level gate drive and under-voltage protection.

MOSFETs are the basic components used for power switching and control in digital circuits. MOSFETs are capable of carrying out enormous current and voltage levels at a high frequency and with a high degree of efficiency. The STF28N60DM2 employs a single N-channel MOSFET to provide low loss, high efficiency and high reliability switching capability.

The STF28N60DM2 is a low RDS (on) device, with an on-resistance of only 35 milliohms. It is also capable of a low output capacitance Coss of 34pF, which makes it suitable for high switching frequency applications. It operates at a maximum drain-source voltage (VDSS) of 600 volts, a drain current (ID) of 28 amps and a drain-source on-state resistance (RDS (on)) of 35 milliohms.

The STF28N60DM2 has a wide range of applications in high power control and switching. It can be used in inverters, rectifiers, motor control, motor drive inverter circuits, motor speed controllers, UPS systems, battery chargers and other high current applications. In motor drive inverter circuits, the STF28N60DM2 can be used to drive the motor with low losses and high efficiency. In battery chargers, the device can be used to enable fast charging and accurate voltage and current control.

The STF28N60DM2 works on the basic principle of field-effect transistors (FETs). FETs are three-terminal devices with a semiconductor substrate between two gates. The transistor’s operation is based on the varying of the channel conductance when a voltage is applied between the two gates. This voltage, known as the gate-source voltage (VGS) slightly modifies the width of the channel between two source contacts and allows the device to be used for both switching and amplification purposes.

The drain-source voltage (VDS) affects the conductance of a FET, controlling both its linear and switching behavior. The device has a threshold voltage Vth, below which the channel is completely blocked and above which the channel is fully opened and the device is conducting. The higher the drain-source voltage, the larger the magnitude and faster the switch-on and switch-off times.

In conclusion, the STF28N60DM2 is a single MOSFET transistor that is suitable for high power applications where low loss, high efficiency and high reliability are required. It operates with a wide range of voltages and has low on-resistance losses. It is capable of high switching frequency applications and can be used for motor drive circuits and battery chargers. By employing the principles of field-effect transistors, the device can perform both switching and amplification functions.

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