Allicdata Part #: | 497-12574-5-ND |
Manufacturer Part#: |
STF28NM50N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 21A TO-220FP |
More Detail: | N-Channel 500V 21A (Tc) 35W (Tc) Through Hole TO-2... |
DataSheet: | STF28NM50N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1735pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 158 mOhm @ 10.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STF28NM50N is an N-channel planar MOSFET device manufactured by STMicroelectronics. It is a robust, cost-effective and efficient solution when power management, switching, and protection are required in an application.
The STF28NM50N is capable of switching frequencies as low as 0.2GHz, with a typical drain-source breakdown voltage of 37V, and maximum drain current of 28A. This makes them ideal for power management in electronic circuits, such as motor and actuator control, discrete and integrated power supplies, and lightning and switching applications. Additionally, the device can withstand a starting voltage at both cold start and hot start conditions of up to 400V, without latch up or failure.
The STF28NM50N belongs to the single class of MOSFETs, in which the device is composed of a single semiconductor layer. This provides a simpler design compared to multi-gate MOSFETs, with improved electrical performance and minimized power dissipation.
The working principle of the device is based on the principles of thermionic emission and field effect. Through the application of an external gate voltage, electrons are forced out of the source and onto the drain, decreasing the resistance of the channel as the gate voltage increases. This increase in current through the drain/source allows for high-efficiency power-switching of the device.
The STF28NM50N is a very versatile MOSFET device with a wide range of application fields. It can be used in a variety of circuits, including those requiring low to medium power levels and pulsing duty cycles. It is also a suitable choice for high-frequency applications such as DC-DC converters and measurement and control systems. Additionally, it can be utilized in switching power supplies, motor controllers, and servo drives.
The STF28NM50N is a robust MOSFET device, which offers reliable power management, protection and high current switching in applications where efficiency and reliability are paramount. Its single-layer design ensures high performance, making it an ideal choice for applications that require power management, switching and protection in a cost effective way.
The specific data is subject to PDF, and the above content is for reference
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