Allicdata Part #: | STF23NM60N-ND |
Manufacturer Part#: |
STF23NM60N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 19A TO-220FP |
More Detail: | N-Channel 600V 19A (Tc) 35W (Tc) Through Hole TO-2... |
DataSheet: | STF23NM60N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2050pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 9.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STF23NM60N is a Field-Effect Transistor (FET) device which forms a key component in the realm of power electronics and energy conversion. Known as a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor), this device is capable of very high-current and high-power operating levels, presented in an encapsulated package which is resistant to the physical stresses of extreme environments. This makes it ideal for use in a range of circuits and systems, from power amplifiers and power switching applications to motor speed controls, voltage and current regulation circuits, and even lighting control. In this article, we will explore the application field and working principles of the STF23NM60N.
Features and Benefits
The STF23NM60N has a range of features and benefits which make it ideal for use in a range of circuits. Specifically, it has a high-current operating level rating of up to 60A (RDS on-max) and a maximum operating voltage of 600V. Additionally, its high power rating of up to 450W allows it to handle a wide range of power switching applications and large loads with high efficiency. Furthermore, it has a maximum drain-source on-state resistance of just 0.022Ω (RDS on-max). This means that it has a low switching loss, making it very efficient in the areas of power control and energy conversion.
The STF23NM60N has been specifically designed for use in systems which use extremely high-frequency voltage and current levels. This is because it has a high total gate charge of 146nC (Qg-max) and a continuous current drain of up to 100A (ID-max). Additionally, its on-state drain-source breakdown voltage (min) of 800V allows it to withstand high levels of voltage and current for extended periods of time, making it suitable for use in applications which involve high-frequency signals and currents. Finally, its nominal gate-source threshold voltage of 4V (VGSth-max) enables it to be used in voltage and current regulation systems with excellent results.
Application Field and Working Principle
The STF23NM60N MOSFET is primarily used in power amplifiers, power switching circuits and motor speed control systems. It functions as an amplification and electrical switching device, where it is used to control high-power and large loads with amazing efficiency. This is possible due to its combination of high operating current and voltage levels as well as its low power consumption. As such, it can be used in a range of high-frequency voltage and current regulation systems.
The STF23NM60N MOSFET works by controlling the amount of current that flows between the device\'s drain and source terminals. To do this, a voltage is applied to the gate terminal which controls the amount of current that can flow between the drain and source. The applied voltage determines the \'on\' or \'off\' status of the device, and the amount of current that is allowed to flow. This voltage can then be varied in order to regulate the flow of current across the device.
The STF23NM60N MOSFET also offers excellent immunity from switching noise, due to its low gate-source capacitance of 0.55pF (Coss-max). This means that it can be used in a range of noisy applications, such as motor speed control systems, with minimal interference. Finally, its high maximum drain-source voltage of 800V also provides excellent protection against high-voltage conditions which could potentially damage the device.
Conclusion
As one of the most powerful and reliable FET devices currently available, the STF23NM60N is an excellent choice for power switching and voltage and current regulation applications. The device offers a high-current and low-loss operation, thanks to its low RDS on-max and Qg-max values, while its high total gate charge and maximum drain-source voltage ratings ensure excellent performance and immunity from switching noise. The STF23NM60N is thus an ideal choice for a wide range of systems which use high pulse frequencies, high-operating currents and voltages, and large loads.
The specific data is subject to PDF, and the above content is for reference
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