Allicdata Part #: | 497-5005-5-ND |
Manufacturer Part#: |
STF25NM60N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 21A TO-220FP |
More Detail: | N-Channel 600V 21A (Tc) 40W (Tc) Through Hole TO-2... |
DataSheet: | STF25NM60N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 10.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STF25NM60N is a N-channel 600V power field effect transistor that is manufactured by STMicroelectronics. This device is designed to offer protection and high-performance in applications like motor control, home appliances, industrial and lighting. The STF25NM60N is part of the STripFET family and provides an easy to use, robust and cost effective solution for power management.
An N-channel MOSFET can be explained as an insulated gate electrode sitting between the source and drain, within an oxide layer. It is a three terminal device, composed of the gate, drain, and source. The gate is responsible for controlling the electric flow between the source and drain when voltage is applied to it. When the gate is in the off-state, the device is in a blocking mode, and current cannot flow between the drain and source. When the gate is in the on-state, the device is in a conducting state, and the current can flow freely between the drain and source. The STF25NM60N’s threshold voltage is 4.2V, however, when a voltage is applied even smaller than 4.2V, it starts to conduct.
The STF25NM60N features a peak current of ±25 amps and an avalanche energy of 230mJ, as well as a fully-enhanced, superior-reliability, enhanced-avalanche feature, which makes it one of the best in its class for high current applications. It also offers a dual-gate low-on resistance of 0.44 ohms and an impressive power dissipation of 70Watts. This makes the STF25NM60N the ideal device for industrial and domestic motor control circuits, lighting applications, and high power switching.
STMicroelectronics claims that the STF25NM60N is the world’s first 600V device with a built-in feedback function to detect current overload or device limitation. The integrated feedback signal can be used to provide an early warning of high current overload or an imminent device failure. Additionally, the STF25NM60N is also designed to minimize noise due to the high dV/dt immunity and low gate charge.
The STF25NM60N is ideal for all types of motor control, switching and power management applications that require high current, robustness, and switching speed. Additionally, it can also be used in home appliance applications and industrial lighting, making it a versatile choice for a variety of applications.
In conclusion, the STF25NM60N is an impressive N-channel power field effect transistor, offering protection, high current, and robust performance for a variety of industrial and domestic applications. With an enhanced avalanche feature and integrated feedback signal, the device provides an ideal cost effective solution for motor control, home appliance and industrial switching.
The specific data is subject to PDF, and the above content is for reference
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