STF20N95K5 Allicdata Electronics
Allicdata Part #:

497-12975-5-ND

Manufacturer Part#:

STF20N95K5

Price: $ 4.86
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 950V 17.5A TO-220FP
More Detail: N-Channel 950V 17.5A (Tc) 40W (Tc) Through Hole TO...
DataSheet: STF20N95K5 datasheetSTF20N95K5 Datasheet/PDF
Quantity: 1000
1 +: $ 4.85730
10 +: $ 4.71158
100 +: $ 4.61444
1000 +: $ 4.51729
10000 +: $ 4.37157
Stock 1000Can Ship Immediately
$ 4.86
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 330 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Drain to Source Voltage (Vdss): 950V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STF20N95K5 is a 20A, 9500V, single N-channel MOSFET transistor. This component is one of the most widely used type of Field Effect Transistor (FET), used in a variety of circuits and applications since the 1960’s. FETs are broad, generic terms for three-terminal, non-linear active devices used for amplification, switching, and energy transfer.

A single N-channel MOSFET such as the STF20N95K5 has the following main characteristics: drain-source voltage rating of 9500 V; gate-source voltage rating of 12V; and drain current specification of 20 A. It is designed to handle with loads up to 9500 V and has a gate-source voltage specification of 12V.

The STF20N95K5 is suitable for use in various applications and systems, including high voltage power supplies, motor control systems, motor protection circuits, switch mode power supplies and more. The device offers excellent switching performance and can handle a wide range of applications and conditions. It is also robust, reliable and long-lasting.

The STF20N95K5 is a three-terminal device, meaning it has a source, a gate, and a drain. The source and the drain are connected to the two terminals of the load, while the gate serves as the control electrode. In this type of FET, the applied gate voltage controls the flow of current between the source and the drain.

When a positive voltage is applied to the gate of the device, it creates an electric field between the gate and the drain, causing electrons to flow from the source to the drain as an electric current. This action is known as “inversion” and is the basis for operation of the MOSFET transistor. In this way, the transistor acts as a switch, allowing current to flow between the source and the drain when the gate is positively charged.

The STF20N95K5 is an ideal choice for many applications due to its high breakdown voltage, its low on-state resistance and its low gate source capacitance. It can be used in a wide variety of circuits, including those that require high-current switching, high-voltage isolation, and high-speed switching. In addition, the device has been designed to operate efficiently under demanding conditions such as in high-temperature and high-voltage applications.

The STF20N95K5 provides a reliable, stable and secure solution for a wide range of application fields. It can be used to provide power conversion in systems that require high voltage levels and fast switching speeds. Additionally, the device is designed to offer reliable performance in high temperature environments and to provide noise-free switching.

Overall, the STF20N95K5 MOSFET transistor is a reliable, robust and easy to use component for many applications. Due to its high breakdown voltage and low on-state resistance, it can be used in a wide range of applications, ranging from motor control systems to switch mode power supplies. It is also one of the most widely used Field Effect Transistors, used since the 1960s in various circuits and applications.

The specific data is subject to PDF, and the above content is for reference

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