STF24N60M2 Allicdata Electronics
Allicdata Part #:

497-13577-5-ND

Manufacturer Part#:

STF24N60M2

Price: $ 2.13
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 18A TO220FP
More Detail: N-Channel 600V 18A (Tc) 30W (Tc) Through Hole TO-2...
DataSheet: STF24N60M2 datasheetSTF24N60M2 Datasheet/PDF
Quantity: 963
1 +: $ 2.13000
10 +: $ 2.06610
100 +: $ 2.02350
1000 +: $ 1.98090
10000 +: $ 1.91700
Stock 963Can Ship Immediately
$ 2.13
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Series: MDmesh™ II Plus
Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STF24N60M2 is a n-channel enhancement mode MOSFET developed by STMicroelectronics. This device is an ideal choice for power conversion applications, providing easy to use, high efficient, and cost-effective solutions.

An application field for this device is as an amplifier in audio applications. The STF24N60M2 MOSFET includes advanced circuitry allowing for higher gain and power output than traditional audio amplifier designs. This device also has a low noise profile due to its high source-drain impedance, making it an ideal choice for low power audio amplifiers.

Another application field is motor control, where the low on-resistance of the STF24N60M2 is ideal. The device contains an advanced driver circuit to ensure efficient, smooth, and accurate motor control. In this application, the STF24N60M2 provides an efficient solution with higher power and torque than more traditional designs. The device can also work in a much wider temperature range than traditional power transistors, making it suitable for automotive systems and industrial applications.

The working principle of the STF24N60M2 is based on voltage and current control. The device is normally off and can be turned on using voltage or current. When the device is turned on, a small current will flow between the gate and the drain, allowing current to flow between the source and the drain. This current is controlled by the voltage applied to the gate, with higher voltage resulting in higher current. The drain-source voltage will remain constant under the influence of the applied voltage.

The STF24N60M2 has a number of features that make it a perfect choice for power conversion applications. The device is equipped with ESD protection and is also capable of withstanding over-voltage conditions, ensuring reliable operation. The device also has low gate-source capacitance, which helps reduce switching losses and improves design efficiency. The device also has low on-resistance and low gate-source and drain-source capacitances, which reduces power loss over a wide range of operating conditions.

The STF24N60M2 MOSFET is an ideal choice for a wide range of audio, motor control, and power conversion applications. Its excellent characteristics allow it to operate efficiently in a wide range of temperatures, while also providing high power and current control. The ESD protection and over-voltage protection features ensure reliable operation, while the low on-resistance reduces power loss and increases efficiency. In addition, the low capacitances ensure reduced switching losses and improved design efficiency. All of these features combine to make the STF24N60M2 an ideal choice for power conversion and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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