STF20N20 Allicdata Electronics
Allicdata Part #:

497-4339-5-ND

Manufacturer Part#:

STF20N20

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 200V 18A TO220FP
More Detail: N-Channel 200V 18A (Ta) 25W (Tc) Through Hole TO-2...
DataSheet: STF20N20 datasheetSTF20N20 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 125 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STF20N20 is a high voltage, high speed, N-channel Power MOSFET.

With its low on-resistance and fast switching times, the STF20N20 is perfect for high voltage applications that require high speed performance. The STF20N20 boasts an adjustable threshold voltage, allowing it to be suited to a variety of applications.

The STF20N20 is a single component device, which makes it easy to use and less expensive than other types of power transistors. It has a standard body size, which reduces the amount of on-board area required to place the component in an application. The STF20N20 also utilizes a “floating” gate configuration, making it compatible with a variety of substrate materials.

When it comes to applications, the STF20N20 is best suited for high voltage, low power consumption applications. Its low on-resistance also makes it suitable for switching high capacitive loads. It is also excellent for use in DC-DC converter circuits, where the device can handle high switching speeds with ease. In addition, the STF20N20 allows for excellent noise immunity and can be used in a variety of power conversion applications.

The working principle behind the STF20N20 is based on the same design principles that govern all MOSFET transistors. In order to understand how the device works, it is important to first understand what a MOSFET is. A MOSFET is a type of transistor that utilizes the principle of electric field effect to control current flow. A MOSFET is composed of a source and drain terminals, as well as a gate terminal. The electric field generated between the gate and source controls the amount of current that can flow between the two terminals.

The electric field in a MOSFET is generated by applying a voltage to the gate terminal. When the voltage is sufficient, it creates an electric field that can push electrons from the source to the drain. This creates an “on” condition in which current passes from the source to the drain. This is the basic principle behind the working of a MOSFET and is the same principle upon which the STF20N20 operates.

The STF20N20 is also equipped with an adjustable threshold voltage. This allows the device to work with different levels of current, thus enabling it to be used in a variety of applications. When a voltage is applied to the gate terminal of the STF20N20, it can either turn the device “on” or “off”, depending on the amount of current and the voltage applied. The voltage required to turn the device on (the threshold voltage) must exceed the potentials applied to the source and the drain.

In conclusion, the STF20N20 is a high voltage, high speed device, geared towards high voltage applications. Utilizing an adjustable threshold voltage, the device can be used in a variety of applications from DC-DC conversion to noise immunity and power conversion. By utilizing the principle of electric field effect, the STF20N20 is able to control current flow and provide excellent performance for signal and power applications.

The specific data is subject to PDF, and the above content is for reference

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