Allicdata Part #: | STF20NM60D-ND |
Manufacturer Part#: |
STF20NM60D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 20A TO-220FP |
More Detail: | N-Channel 600V 20A (Tc) 45W (Tc) Through Hole TO-2... |
DataSheet: | STF20NM60D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
Series: | FDmesh™ |
Rds On (Max) @ Id, Vgs: | 290 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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STF20NM60D is a very popular power FET device that is widely used in various switch mode power applications. This device is an n-channel enhancement mode metal oxide semiconductor field-effect transistor (MOSFET). As a type of MOSFET, it has many desirable features and is therefore very popular in a number of industrial and consumer applications.
The STF20NM60D has a drain-source current rating of 20A and a breakdown voltage rating of 60V. This transistor is also very efficient and has a very low RDSON, or on-state resistance. This makes it a great choice for applications where efficiency is important, such as power supplies and motor controllers.
In terms of its application field, the STF20NM60D is most commonly used in DC/DC converters and motor controllers. It is also used in applications such as power supplies, audio amplifiers and LED drivers. It is also popularly used to implement level-shifting in logic circuits which require high- and low-side drive signals.
When it comes to the actual working principle of the STF20NM60D, it is relatively straightforward. The device has an n-channel region and a p-channel region, which are separated by a thin layer of insulating silicon dioxide. When a voltage is applied between the source and gate of the device, this causes electrons to be attracted to the gate and the resulting electric field induces a charge in the gate oxide. This charge in turn creates an electric field between the p-channel and n-channel regions, which changes the electrical conductivity of the device.
When this device is used in its linear mode, the voltage applied between the source and gate causes the current flow through the device to vary in a linear fashion. This is because the gate-source voltage is roughly proportional to the current through the device. However, when the device is operated in its switching mode, the voltage between the source and gate is quickly switched from high to low and vice versa, which results in the current through the device switching from high to low and vice versa. This makes the STF20NM60D ideal for applications that require rapid electrical switching.
Overall, the STF20NM60D is a very useful and popular power FET device that is used in a wide range of applications. Its desirable features and low RDSON make it a great choice for many power-related applications, such as DC/DC converters, motor controllers and LED drivers. And since the device operates by quickly switching voltages between its source and gate, it is ideal for applications that require rapid electrical switching.
The specific data is subject to PDF, and the above content is for reference
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