STF20NK50Z Allicdata Electronics
Allicdata Part #:

497-8894-5-ND

Manufacturer Part#:

STF20NK50Z

Price: $ 4.37
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 17A TO-220FP
More Detail: N-Channel 500V 17A (Tc) 40W (Tc) Through Hole TO-2...
DataSheet: STF20NK50Z datasheetSTF20NK50Z Datasheet/PDF
Quantity: 833
1 +: $ 4.36590
10 +: $ 4.23492
100 +: $ 4.14760
1000 +: $ 4.06029
10000 +: $ 3.92931
Stock 833Can Ship Immediately
$ 4.37
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 270 mOhm @ 8.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STF20NK50Z is a power field-effect transistor (FET) of the Z-series from ST Microelectronics. It is a N-channel, standard level, dual-die power MOSFET, renowned for its high performance and low on resistance. STF20NK50Z is designed for use in a wide variety of applications such as automotive, industrial, and consumer electronics.

STF20NK50Z has a package size of 8x8mm2, with a maximum drain source voltage of 500V and a Drain current of 500A. It possesses very low on resistance (1.7mOhm) with low gate charge (71nC). It is available in a 7-pin SOP package type, making it easier to install. The device operates in a temperature range of 150-200 degrees Celsius.

Application Field: STF20NK50Z power MOSFET is best suited for applications such as AC/DC inverters, motor drives, power supply units, automotive inverters, power converters, power module applications, lighting and solar applications, snubber circuits, and high voltage power management.

Working Principle: The working principle of the STF20NK50Z power MOSFET is based on the same principle used for other MOSFETs. It consists of two terminals, the source and the drain, with a metal–oxide–semiconductor layer separating them. The voltage applied to the gate terminal causes a depletion region to form underneath the metal–oxide–semiconductor, controlling the width and thus the flow of current through the channel. This results in the source current being switched ON and OFF, which allows for a wide range of control.

The STF20NK50Z is well-equipped with a number of helpful features. The integrated bootstrap diode provides the required level of protection for high voltage applications. The Dual N-Channel feature provides both parallel and serial control possibilities. The fast switching capability and high frequency operation are ideal for obtaining the highest peak efficiency and dynamic response.

STF20NK50Z is a versatile power MOSFET, ideal for a wide range of applications. Its advanced features, low on resistance, and good thermal performance make it a great choice for demanding power management applications. With its robust package and reliable performance, this device is sure to meet the increasingly stringent requirements of the power management industry.

The specific data is subject to PDF, and the above content is for reference

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