Allicdata Part #: | 497-11867-5-ND |
Manufacturer Part#: |
STF20NM65N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 15A TO-220FP |
More Detail: | N-Channel 650V 15A (Tc) 30W (Tc) Through Hole TO-2... |
DataSheet: | STF20NM65N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1280pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STF20NM65N is a N-channel enhancement-mode power field effect transistor (FET) made by STMicroelectronics. It is designed using the company’s SuperFET technology, and features low on-state resistance, fast switching speeds, and low gate charge. It is suitable for use in various industrial, consumer, and automotive applications.
The STF20NM65N is a power MOSFET which belongs to the single transistor type FETs. It has a drain-source voltage of 650V and a drain current rating of 20A. It is a three-pin device, with a drain terminal, a gate terminal, and a source terminal. It is typically used in power switching applications such as motor control and DC-to-DC converters. It is also suitable for lighting dimming, over-voltage protection, and other power related applications.
The working principle of the STF20NM65N is based on the fundamental operation of a MOSFET. It operates by varying the voltage applied to the gate terminal to control the current flowing through the drain and source terminals, depending on the input voltage applied to the drain-source terminals. The higher the input voltage, the greater the drain current, and vice versa.
The STF20NM65N features low on-state resistance, which is beneficial for reducing the power dissipation in power switching applications. The device has a typical on-state resistance of 1.6 mOhms, which is ideal for high current handling applications. In addition, it has a fast switching speed, making it suitable for applications that require fast switching of power, such as motor control.
The STF20NM65N also features low gate charge, which makes it ideal for applications that require quick switching between low and high power states. The low gate charge of 4.7 nC makes it possible to quickly switch between low and high power states. This is beneficial in applications such as dimming of LED lights, or other similar functions which require quick switching between low and high power states.
The STF20NM65N is available in a variety of package sizes to suit a wide range of applications. It is available in a TO-220FP and DPAK packages for surface mount applications, and TO-220 and D2PAK package for through-hole applications. The device is rated for operation from -55 to +175 degrees Celsius, allowing for usage in harsh operating environments.
The STF20NM65N is a versatile device that can be used for a variety of applications. This includes motor control, DC-to-DC converters, LED lighting dimming, over-voltage protection, and other power related applications. The fast switching speed, low on-state resistance, and low gate charge make it ideal for applications which require quick power switching or low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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