
Allicdata Part #: | 497-12853-5-ND |
Manufacturer Part#: |
STF21N90K5 |
Price: | $ 4.78 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 900V 18.5A TO-220FPN-Channel 900V 18.5... |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 984 |
1 +: | $ 4.78170 |
10 +: | $ 4.63825 |
100 +: | $ 4.54261 |
1000 +: | $ 4.44698 |
10000 +: | $ 4.30353 |
Series: | SuperMESH5™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900V |
Current - Continuous Drain (Id) @ 25°C: | 18.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 299 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Power - Max: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1645pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 40W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FP |
Package / Case: | TO-220-3 Full Pack |
Base Part Number: | -- |
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STF21N90K5 is an N-channel enhancement mode field effect transistor (FET). It is based on a 900V technology and it has a maximum drain-source on-state resistance of 21mΩ. FETs are active devices, meaning that biasing is required for them to work in linear regions. They are also efficient in controlling current and come in two types, N and P channel.
The STF21N90K5 is a vertical power MOSFET. Compared with a traditional MOSFET, it is much more efficient in voltage control and dissipates less heat. It also has a lower gate capacitance and a higher drain current capability.
The STF21N90K5 is commonly used in rectifying, inverters, voltage control, and DC-to-DC conversion applications. Its main application fields are converters, inverters, DC-DC power supplies, and entry-level industrial power applications.
The STF21N90K5 uses the basic workings of a field effect transistor with some improvements. Its fet consists of four elements from the top layer of metal oxide: the source, drain, and gate, and a silicon substrate. It’s when voltage is applied to the control terminal (gate) on the device that determines if the device is conducting or not.
The metal oxide part of the STF21N90K5 is what makes it so efficient in controlling current. It allows negative charge carriers to flow between the source and the drain without any internal resistance. When the negative charge carriers fly to the drain, they create a charge which makes an electric field that controls the current through the FET.
The STF21N90K5 is a critical component used in a wide array of electronic applications. It is used to regulate current and can be used in voltage control and DC-to-DC power supply applications. Thanks to its low on-state resistance, it is also an ideal choice for high-efficiency applications.
The STF21N90K5 offers a range of features that make it perfect for a variety of applications. It has a wide breakdown voltage of 900V, low on-state resistance, high current handling capabilities, and excellent temperature stability. Its low gate capacitance and high drain current capability also make it an excellent choice for rectifiers, inverters, and DC-DC convertors.
The STF21N90K5 is an important component in the design of power conversion systems. It is a reliable, efficient, and easy to use FET and is ideal for controlling current and voltage in numerous applications. It has a wide range of features that make it a perfect choice for almost any need.
The specific data is subject to PDF, and the above content is for reference
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