STH210N75F6-2 Discrete Semiconductor Products

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The STH210N75F6-2 is a power MOSFET transistor commonly used in high-current and high-voltage applications.

Capable of handling large current pulses, this device is designed for switching, power conversion, and power supply applications. It can be used in AC-DC and DC-DC converters and has a drain-source breakdown voltage of 1,525 V. Its peak drain current is 125 amperes, and its R_DS(on) at 25° C is between 0.06 Ω and 0.11 Ω.

The STH210N75F6-2 has a maximum drain-source voltage of 200 V and a maximum gate-source voltage of ± 20 V. It can operate at temperatures of up to 175°C, making it suitable for use in high-temperature applications. It also has a relatively low on-resistance, making it ideal for switching applications. The device is available in a package of 25.3 mm x 17.3 mm with a maximum total power dissipation rating of 180 W.

The STH210N75F6-2 is a vertical, single N-channel power MOSFET transistor, with a high-performance, low-impedance, optimized structure and process design. It is designed with a symmetrical structure, which enables it to have excellent switching performance and lower on-resistance. The symmetrical structure also gives it improved short-circuit ruggedness when compared to other single N-channel MOSFETs.

It works by allowing a voltage applied to its gate terminal to change the current flowing between its source and drain terminals. When the gate voltage rises, electrons will flow from the source to the drain, effectively increasing the current that can flow through the MOSFET. The current then continues to flow until the gate voltage is lowered and this current is blocked. This way, the MOSFET can be used to control current flow.

In addition to its switching applications, the STH210N75F6-2 can also be used in power supply applications such as DC-DC converters. Its very low on-resistance allows for efficient operation in these applications, resulting in lower power loss. It also has a high-performance internal architecture which enables it to provide stable operation in high-current and high-voltage applications.

In summary, the STH210N75F6-2 is a power MOSFET transistor ideal for switch, power conversion, and power supply applications that require fast switching and low power loss. It is available in a package of 25.3 mm x 17.3 mm with a maximum total power dissipation rating of 180 W and can support a peak drain-source voltage rating of 1,525 V.

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