STH270N4F3-2

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab) Variant
Supplier Device Package:	H²PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7400pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	150nC @ 10V
Series:	Automotive, AEC-Q101, STripFET™ III
Rds On (Max) @ Id, Vgs:	1.7 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	180A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IntroductionThe STH270N4F3-2 is an N-channel MOSFET that is used in a variety of applications, including amplifier, power management, motor control and other industrial applications. The STH270N4F3-2 is a single, through-hole package which is ideal for use in power management applications.The STH270N4F3-2 is a high-performance MOSFET that offers improved performance and reliability in its applications. The device also offers low on-resistance, low gate charge, low thermal resistance and is ESD-protected.Application FieldsThe STH270N4F3-2 is a versatile device and can be used in a variety of applications that involve the control of power. Examples include the control of high-current applications in power supplies, amplifiers, converters, motor controllers and drivers. It is also used in audio circuits, signal processing applications, lighting control and power management.The STH270N4F3-2 is particularly suited to applications that involve switching and controlling power. Its features, such as its low on-resistance, low gate charge and low thermal resistance, make it ideal for such applications.Working PrincipleThe STH270N4F3-2 is an N-channel MOSFET and operates by using the channel between the source and drain to control the flow of current through the device. The channel is created when a voltage is applied to the gate terminal. When a voltage is applied to the gate terminal, it creates an electrostatic field, which attracts electrons and reduces the resistance in the channel. This, in turn, allows current to flow through the device.When the voltage is removed from the gate terminal, the electrostatic field disappears and the resistance of the channel increases again. This stops the current flow and the device is turned off.The main advantage of the STH270N4F3-2 is its low on-resistance and low gate charge, which make it an efficient switch in power management applications.ConclusionThe STH270N4F3-2 is a high-performance N-channel MOSFET with low on-resistance and low gate charge. It is suitable for a variety of power management applications, such as switching and controlling power, audio circuits, signal processing applications, lighting control and power management. Its high performance and reliable operation make it an ideal choice for many power management applications.

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