STH260N6F6-6

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STH260N6F6-6 is a power MOSFET device developed by STMicroelectronics. The device is a single N-channel, Enhancement mode MOSFET, housed in one of two configurations, a standard TO-220 or exposed pad Leadless Power package. The exposed pad Leadless Power package is provided with a "F-Tab" an exposed metal tab that is used to mount the device to a heatsink.

The STH260N6F6-6 is designed for applications where high efficiency, high speed switching and high power dissipation are the key requirements. The MOSFET device can provide up to 20A of power to loads in the 4.5V to 100V range, with an on resistance of 260mOhms. The device has a drain-source voltage of 100V with a maximum drain current of 20A, making it a suitable device for solutions such as amplifier output stages, high power switching and switching power supplies.

The STH260N6F6-6 MOSFET utilizes a advanced trench technology called STripFET™, which provides superior switching performance, excellent on resistance and low gate charge. STripFET™ technology gives the MOSFET superior performance characteristics over conventional planar MOSFET devices, such as higher current ratings, lower gate thresholds and lower switching losses. The device is also very efficient in its use of power, making it an ideal choice for focused solutions which require a high level of power efficiency.

The STH260N6F6-6 MOSFET device is based on a single Transistor-FET (Field Effect Transistor) architecture, incorporating three terminals in the form of a drain (D), gate (G) and source (S). The device follows the same principles as all other Transistor-FET devices, however the MOSFET architecture provides superior switching performance due to its lower gate threshold voltage and reduced switching losses when compared to other Transistor-FET architectures.

The key feature of the STH260N6F6-6 as well as all Transistor-FET devices, is the ability to control large currents with a low voltage signal. This is achieved by applying a low-voltage signal at the gate terminal of the device, which in turn will cause the drain terminal to increase in voltage, allowing current to flow through the Source to Drain path. As such, the MOSFET device can be used as an amplifier or switch, depending on the application and the signals applied at the Gate terminal.

The STH260N6F6-6 MOSFET device can be used in a range of applications, including motor control, switched-mode power conversion, power supply rectification and general high power switching. The device is also suitable for use in in-line power distribution, high power switching and switching power supply applications due to its high current ratings, low on resistance and excellent switching efficiency. The device is also suitable for amplifier output stages, as the low gate drive allows for switching between loads of different impedances with minimal power losses.

In summary, the STH260N6F6-6 is a single N-channel, Enhancement mode, Power MOSFET device designed for applications requiring high efficiency, high speed switching and high power dissipation. The device is based on a Transistor-FET architecture and utilizes a advanced trench technology called STripFET™. This technology provides superior switching performance, excellent on resistance and low gate charge. The STH260N6F6-6 MOSFET device can be used in a range of applications, including motor control, switched-mode power conversion, power supply rectification and general high power switching.

The specific data is subject to PDF, and the above content is for reference