STH265N6F6-2AG

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The STH265N6F6-2AG is a type of N-channel enhancement-mode field-effect transistor (FET). A FET works as an electrically-controlled switch and is the most commonly used type of transistor in modern electronics. This type of FET is specifically a metal-oxide-semiconductor FET (MOSFET) which consists of three terminals (gate, source and drain) and a channel between them. In order of electrical signal to passed from source to drain, the gate must be charged with positive voltage which activates an electric field, “pulling” the electrons from source to drain.

The STH265N6F6-2AG is specifically a N-channel MOSFET which means the channel is composed of a majority of electron-carrying “negative” charges. A N-channel MOSFET has the most common application of amplifying or switching electrical signals and is especially useful because of its tiny size, fast switching speed, ability to handle high power and good frequency response.

The STH265N6F6-2AG is a single FET with a breakdown voltage of +-20V and an ON resistance of 8 milliohms. It features a very low gate charge of 2.1 nano-coulombs and a maximum drain current of 10 amps. It is typically used in applications such as Audio Amplifiers, DC-DC converters, power efficiency and booster circuits.

In conclusion, the STH265N6F6-2AG is a type of single FET with many versatile applications. It is effective in low-power devices, due to its small size, fast switching speed and excellent frequency response. Furthermore, it can also be used in high-power devices thanks to its breakdown voltage and maximum drain current of 10amps.

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