STH250N55F3-6 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package:	H²PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6800pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	100nC @ 10V
Series:	STripFET™ III
Rds On (Max) @ Id, Vgs:	2.6 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	180A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The STH250N55F3-6 is an N-channel enhancement mode power MOSFETs produced with the latest PowerMESH™ technological advances, making them suitable for a wide range of applications. Developed with cutting edge technology, the MOSFETs have greater reliability, lower on-resistance and extended temperature ranges, making them ideal for high temperature and high power circuits. This article will explore the application field and working principles of the STH250N55F3-6 MOSFET.

Application Field

The STH250N55F3-6 is ideal for high temperature, high power applications such as:

• Motor control
• Powery converters and Power supplies
• Inverters for photovoltaic and wind energy
• Auxiliary and main power switches
• Lighting control
• High frequency switching

Juat about any application that requires a reliable power switch for high power circuits, the STH250N55F3-6 is a great choice. The low on-resistance of the MOSFET enables higher current flow at given voltage, and therefore keeps power losses to a minimum. This makes the STH250N55F3-6 ideal for efficient power applications.

Working Principle

The STH250N55F3-6 is an N-channel enhancement mode power MOSFET. MOSFETs are effective low power devices that use current flowing through an oxide layer to open and close a gate. The N-channel mosfet has an n-type substrate with an n type channel that connects the drain to the source. It has a high resistance until the gate voltage is high enough to turn on the MOSFET.When a positive voltage is applied to the gate, it creates an electrostatic attraction between the gate and the source, creating a current flow from drain to source. As the gate voltage rises, the current increases until the saturation voltage is reached, at which point the current is limited by the source resistance. The source resistance is then increased, and current drops off.When the gate voltage follows, the electrostatic force decreases, reducing the source resistance. This allows current to flow from drain to source until the voltage reaches the cut-off voltage. At this point the MOSFET is turned off and the current terminates. Measuring the voltage of the gate when the current starts flowing is a useful way to measure the on-resistance of the MOSFET. A low on-resistance Gm is a key factor in reducing power losses and increased efficiency. The STH250N55F3-6 offers a low on-resistance Gm.

Conclusion

The STH250N55F3-6 is a reliable and versatile N-channel enhancement mode power MOSFET, ideal for high power and high temperature applications. It has a low on-resistance Gm, making it an efficient choice for power applications. Understanding the application field and working principles of this device enables users to make the most of its features and benefits.

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