STH240N10F7-2

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	H2Pak-2
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	11550pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	160nC @ 10V
Series:	STripFET™
Rds On (Max) @ Id, Vgs:	2.5 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	180A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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STH240N10F7-2 Application Field and Working PrincipleThe STH240N10F7-2 (herein referred to as “the device”) is a Field-Effect Transistor (FET) designed to operate in the range of 10 to 65 volts. It is a single N-channel FET specifically designed for use in applications that require low on-resistance at high frequencies. In general, the device is suitable for high-speed switching, RF, amplifier and power switching applications.In this article, the application field and the underlying working principle of the STH240N10F7-2 will be discussed. Through this discussion, it is hoped that readers will gain a better understanding of the capabilities and limitations of the device in order to more effectively incorporate it into their designs.The device is designed for use in a number of different application fields. These include RF switching and amplifying, power switching, inverters and converter modules. Furthermore, the device is well-suited for use when higher currents, high voltage and switching frequency need to be managed. However, it must be noted that due to its design, the device is only applicable for use in linear circuits and is not suitable for use in switching circuits.Now, let’s look at the underlying working of this device. At its most basic level, the STH240N10F7-2 is an N-channel FET. Its working is predicated upon the presence of a voltage potential between the source and gate terminals. When current is applied to the gate, a voltage potential is formed between the source and the drain terminals. This in turn creates an electric field between the drain and the gate. This electric field serves to modulate the current flow between the source and the drain.The modulated current, or channel current, is then used to control the overall current flow between the source and the drain. The channel current also produces a voltage drop across the gate-source junction. This voltage drop is then used to modulate the current flowing between the source and the drain.The modulation of the voltage-drop across the gate-source junction is referred to as the channel voltage, and it is this attribute that is used to determine the overall amount of current flowing through the device. This channel voltage is also used to control the current gain of the device. The higher the channel voltage, the greater the current gain of the device.At higher frequencies, the STH240N10F7-2 is capable of operating in its “avalanche” region, which is characterized by a very high frequency of operation. In this region, the device can remain in the “on-state” for longer periods of time, which enables it to handle higher currents.In summary, the STH240N10F7-2 is an N-channel FET designed for use in applications that require low on-resistance at high frequencies. It is capable of operating in its “avalanche” region at higher frequencies in order to handle higher currents. The device is suitable for use in a number of different application fields including RF switching and amplifying, power switching, inverters and converter modules. The underlying working principle of the device is based upon the principle of the modulation of the channel voltage in order to control the overall amount of current flow between the source and the drain. It is hoped that readers now have a better understanding of the capabilities and limitations of the device in order to effectively incorporate it into their designs.

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