Allicdata Part #: | 497-13874-2-ND |
Manufacturer Part#: |
STH270N8F7-6 |
Price: | $ 3.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 80V 180A H2PAK-6 |
More Detail: | N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H²... |
DataSheet: | STH270N8F7-6 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 2.79632 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package: | H²PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 315W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13600pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 193nC @ 10V |
Series: | DeepGATE™, STripFET™ VII |
Rds On (Max) @ Id, Vgs: | 2.1 mOhm @ 90A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STH270N8F7-6 is a field effect transistor (FET), specifically a single, N-channel Power MOSFET. It is used for various applications where high switching speeds, low capacitance and low input capacitance are required. It is suitable for easy drive, low profile and low power consumption.
The STH270N8F7-6 is a low-voltage, high-performance FET based on advanced MOSFET (metal oxide semiconductor field-effect transistor) technology. It features a low RDS(on) (< 10mΩ) as well as low gate charge (Qg) and low threshold voltage (Vt). It can be used as an analog switch, driving current and voltage, or in switching applications.
The STH270N8F7-6 is well-suited for applications such as switching regulator power supplies, DC-DC controllers, energy-efficient motor drives, LED lighting, battery-powered appliances, and general-purpose applications.
The STH270N8F7-6 works on the principle of electrostatic control of conductivity. When a voltage is applied to the Gate terminal, it attracts mobile electrons from the channel and induces them to be in a conducting state. This restricts the passage of drain-source current through the device and results in a low output resistance.
The STH270N8F7-6 is designed to operate in a wide range of temperature conditions, with 20mA on-state drain current passed at 25V operation. This ensures reliable operation in even the most challenging applications.
The STH270N8F7-6 can be used to drive high-power devices such as light-emitting diodes (LEDs) and motors. The low gate charge and low input capacitance of this device also make it suitable for high-speed switching applications. It has an improved power efficiency compared to standard MOSFETs, and its high thermal stability means it can better withstand short-term overloading.
In all, the STH270N8F7-6 is an ideal single, N-channel Power MOSFET for applications requiring low-voltage, high-current switching. Its low RDS(on), low gate charge, and low input capacitance make it ideal for a wide range of applications, and its improved thermal stability ensures robust operation in even the most challenging conditions.
The specific data is subject to PDF, and the above content is for reference
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