STH240N10F7-6

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package:	H2PAK-6
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	11550pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	160nC @ 10V
Series:	STripFET™ F7
Rds On (Max) @ Id, Vgs:	2.5 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	180A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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STH240N10F7-6 is an advanced power MOSFET designed for high switching frequency, simplified circuit design and improved reliability. It is a single, integrated package MOSFET with a built-in IntelliFET power stage. The STH240N10F7-6 is part of ST’s highly-advanced STMicroelectronics STH family of IntelliFET products, offering superior performance in a variety of applications. This power MOSFET is particularly suitable for energy-efficient motor control and power supplies. It offers a variety of features and benefits, including high efficiency, low on-resistance and high switching frequency. This makes it an ideal power MOSFET for efficient power conversion in applications ranging from industrial, automotive and consumer applications including aircraft, solar and wind energy and applications in electric and hybrid vehicles. The STH240N10F7-6 is available in a number of packages, including a small surface mount option and a D2PAK-style package for PCB mounting. The robust design of the MOSFET ensures that it can withstand higher voltage and current levels than those of competing power MOSFETs, making it suitable for a wide range of applications. The STH240N10F7-6 is based on a planar double-sided power MOSFET process. The IntelliFET power stage is composed of two MOSFETs which are integrated into a single die. The unique design of these components enables an easier implementation of a low-side device implementation. This also allows for reduced power dissipation due to the low on-resistance of the device. Additionally, theSTH240N10F7-6 offers a high switch frequency, up to 20 MHz. This feature makes it a suitable choice for applications such as switching supplies, point-of-load converters, AC/DC or DC/DC power conversion, and other applications which require high switching frequencies. Finally, the STH240N10F7-6 is designed for maximum reliability. It features an enhanced gate protection circuit, ensuring protection from electrostatic discharge and other parameters. In addition, it has an enhanced power handling capability, capable of handling up to 800V and 20A. In summary, the STH240N10F7-6 power MOSFET is an advanced power device designed for high switching frequency, enhanced reliability, improved power conversion efficiency and simplified circuit design. It can be used in a variety of applications, including industrial, automotive, consumer, aircraft and solar/wind energy applications. It offers numerous advantages, such as a high switch frequency, enhanced power handling capability, and protection from electrostatic discharge. The STMicroelectronics STH family of IntelliFET products provides superior performance in power conversion applications, making the STH240N10F7-6 an ideal choice for those applications.

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