STH290N4F6-2AG Allicdata Electronics
Allicdata Part #:

497-16509-2-ND

Manufacturer Part#:

STH290N4F6-2AG

Price: $ 1.55
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 40V 180A H2PAK-2
More Detail: N-Channel 40V 180A (Tc) 300W (Tc) Surface Mount H2...
DataSheet: STH290N4F6-2AG datasheetSTH290N4F6-2AG Datasheet/PDF
Quantity: 1000
1000 +: $ 1.40988
Stock 1000Can Ship Immediately
$ 1.55
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: H2Pak-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7380pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Series: Automotive, AEC-Q101, STripFET™
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STH290N4F6-2AG is an enhancement-mode power field-effect transistor (FET), which is used in a wide range of analog and digital circuits. In particular, this type of transistor is reliable and easy to use, making it popular with professionals, hobbyists and experimenters alike.

The STH290N4F6-2AG consists of a source, drain and gate, built into a package typically composed of a metal substrate. The source and drain are connected together and connected to the metal substrate while the gate is isolated by the substrate. The metal substrate helps reduce costs and improves the performance of the device. This type of transistor is commonly found in switches, amplifiers, and logic circuits.

In its simplest form, the STH290N4F6-2AG works by controlling the flow of current between the source and the drain. By applying a voltage to the gate, an electric field is generated which in turn, influences the conductivity of the channel between the two regions. This field is known as the channel electric field, or channel gate field.

When the gate voltage is increased, the channel gate field strengthens and the resistance across the channel decreases. This allows for a larger current to flow through the source and drain, allowing for amplification of the signal. When the gate voltage is lowered, the channel gate field weakens, reducing the current flow across the channel.

The STH290N4F6-2AG is widely used in a variety of applications because of its low on-resistance, good thermal performance and its ability to offer good switching speed operation. The most common applications of the STH290N4F6-2AG include motor drivers, power supplies, audio amplifiers, switching power supplies, voltage regulators and relays.

The STH290N4F6-2AG is easy to use, reliable and affordable, making it an ideal choice for anyone looking for a robust and versatile FET. Furthermore, its small form factor makes this transistor well-suited for applications that require minimal space. With its many features and benefits, the STH290N4F6-2AG is the ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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