Allicdata Part #: | 497-11841-2-ND |
Manufacturer Part#: |
STH240N75F3-6 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 75V 180A H2PAK |
More Detail: | N-Channel 75V 180A (Tc) 300W (Tc) Surface Mount H2... |
DataSheet: | STH240N75F3-6 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package: | H2PAK-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 87nC @ 10V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 90A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STH240N75F3-6 is a type of Field Effect Transistor (FET) that is composed of single MOSFET (Metal Oxide Semiconductor FET) having a greater power and voltage range than normal FETs. This FET is an ideal device for higher power and voltage range applications, allowing it to be used in a wide range of applications.
Application Field
The STH240N75F3-6 is mainly used in consumer electronic equipment, audio amplifiers, and electric power generation and control systems due to its high power, voltage and current capabilities. It is also used in the regulated secondary applications such as PFC, PIco-controllers, DC-DC Colpitts regulators, and LED lighting, as well as motor control and battery management systems. It is an ideal choice for applications that involve high power, high voltage, and high current switching up to 99.995 percent efficiency.
Working Principle
The STH240N75F3-6 FET operates in enhancement mode, meaning that the gate voltage must be above the threshold voltage for the device to be turned on. The FET operates with a high input impedance, allowing for low power consumption. The device is also temperature and voltage compensated, resulting in improved stability and reliability. The drain and source are the two terminals of the FET, while the gate is the control terminal. The drain and source are connected to the source of power and the load, while the gate is connected to the voltage or signal that is used to control the FET. When the gate voltage is above the threshold voltage, the FET turns on and allows current to flow from the drain and source, effectively connecting the power source and the load. This allows for precise control of power and voltage.
The STH240N75F3-6 FET has a breakdown voltage of 240V and a current of 75A. The device is also equipped with a self-protection feature that limits the current to 130A when the FET is in overcurrent condition. Furthermore, the device comes in a standard TO-220 package and is RoHS compliant. This device is designed to provide improved performance and reliability, making it an ideal choice for a wide range of applications.
The STH240N75F3-6 FET is a single MOSFET device that provides greater power and voltage ranges than regular FETs, making it ideal for higher power, voltage, and current applications. The device operates in enhancement mode, meaning that the gate voltage must be above the threshold voltage for the device to be turned on. The device is also temperature and voltage compensated for improved stability and reliability, and has a self-protection feature that limits the current to 130A during overcurrent conditions. It is widely used in consumer electronic equipment, audio amplifiers, electric power generation, and control systems, as well as LED lighting, motor control, and battery management systems, among others. The STH240N75F3-6 is an ideal choice for applications involving high power, high voltage, and high current switching up to 99.995 percent efficiency.
The specific data is subject to PDF, and the above content is for reference
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