STH245N75F3-6 Allicdata Electronics
Allicdata Part #:

497-15470-2-ND

Manufacturer Part#:

STH245N75F3-6

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 75V 180A H2PAK-6
More Detail: N-Channel 75V 180A (Tc) 300W (Tc) Surface Mount H2...
DataSheet: STH245N75F3-6 datasheetSTH245N75F3-6 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: H2PAK-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Series: Automotive, AEC-Q101, STripFET™ F3
Rds On (Max) @ Id, Vgs: 3 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STH245N75F3-6 is an insulated-gate bipolar transistor (IGBT) that is both rugged and reliable, making it ideal for a range of applications. It has a voltage rating of 600 volts, and a continuous current rating of 75 amps. It is offered in a TO-247 package, which facilitates a variety of applications.

The STH245N75F3-6 is a development of the advanced IGBT technology that it is based on, providing greater energy efficiency and improved performance in various types of electronic equipment. It is a single component transistor that works by using the current that is created by the management of the gate source voltage. This makes it particularly suitable for use in applications where a high voltage level needs to be maintained.

Due to its high current and voltage ratings, the STH245N75F3-6 is suitable for use in a variety of applications. It is often used in power electronics, such as switch mode power supplies, DC-DC converters, motor controls, and other power applications. It can also be used in consumer electronics like audio amplifiers, televisions, and other consumer electronics. The device is also suitable for a range of industrial applications, such as those dealing with high-power motors and drives, power generation, and more.

The STH245N75F3-6 is a high-performance device with a robust, reliable design. It is capable of operating at temperatures of up to 175°C, making it ideal for high-temperature environments. Additionally, it has integrated overcurrent and overvoltage protection, helping to protect against damage caused by sudden surges. The device also provides excellent immunity to common-mode noise and electromagnetic interference, providing a reliable and stable performance in a range of applications.

The way in which the STH245N75F3-6 works is relatively simple. When the gate source voltage is increased, the current between the gate and the source increases, resulting in a decrease in forward voltage and a decrease in collector-emitter voltage. This, in turn, allows the transistor to conduct most of the current, allowing it to act as a switch. The higher the gate-source voltage, the more current that is able to flow, and the higher the transistor\'s gain.

The STH245N75F3-6 is a highly versatile device that is ideal for a variety of applications. Its high current and voltage ratings, coupled with its integrated protection features, make it perfect for power applications, and its robust design makes it suitable for industrial applications. Additionally, its low forward voltage drop and high current and voltage ratings make it ideal for power management in a variety of device types.

The specific data is subject to PDF, and the above content is for reference

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