STH275N8F7-2AG

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STH275N8F7-2AG is a N-channel depletion-mode power field-effect transistor (FET) with a breakdown voltage rating at 80 VDS and 8-ohm RDS(on). This device is a member of the STH2XX family, which includes 75 V and 100 V rated devices ranging from 2.5 A to 20 A.

The STH275N8F7-2AG has a very high-power density performance, making it suitable for applications requiring a high degree of efficiency and long switching times. It is suitable for switching high voltages with low current leakage. The device can also be used for light and noise control, as it can control large currents without the need for additional components.

The STH275N8F7-2AG has a low on-resistance of just 8-ohm, which helps to ensure a very high degree of efficiency. The device is also designed to dissipate minimal heat, as it utilizes low on-resistance silicon oxide as its insulation layer, which limits losses due to high voltage breakdowns.

In addition, the STH275N8F7-2AG has a very low threshold voltage of just 1 V. This ensures that when the device is switched on, it will not draw a large current surge, which can lead to excessive heat generation and reduced reliability.

When it comes to applications, the STH275N8F7-2AG can be used in a wide range of applications. It is suitable for high-frequency switching applications such as amplifiers, power converters, and motor controllers. It is also suitable for amplifier output stages, high-frequency inverters, and other power electronics applications.

The working principle of the STH275N8F7-2AG is simple. The device utilizes two field-effect transistors (FETs) for the control of voltage and current. A control voltage is sent to the gate of the FETs, which in turn control the source and drain current between the source and the drain. The source and drain current is controlled by the gate voltage and the current flowing through the FETs.

The STH275N8F7-2AG is a highly efficient device, as it enables a very high degree of power efficiency and minimal heat generation. This makes it ideal for applications requiring high voltages and currents with low leakage. It is also suitable for applications requiring light and noise control, as its low on-resistance helps to ensure minimal losses even at high voltages.

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