STH290N4F6-2

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STH290N4F6-2 is a logic level N-channel enhancement mode MOSFET, which provides very low power dissipation ensuring low drain-source on-resistance. This device is a kind of field effect transistor (FET), which belongs to the single type.

Application field: This device may be used in a variety of application fields, like portable appliances, electronic equipment that require small size, low power and low on-resistance. It can also be used for battery and power management, such as charging, AC/DC conversion and DC/DC conversion, such as switching mode power supplies, DC motor control and relay applications.

Working principle: This N-channel enhancement mode MOSFET can be used to control the on/off states of another device, because it has a much lower on-resistance than the latter. It works by creating an electric field between the source and drain and an electric field from the gate to the source. When a positive voltage is applied to the gate, the electric field between the source and drain will increase and the current flowing through the drain and source will become larger. At the same time, the voltage and power between the two terminals will be reduced and the current will be controlled. When the voltage on the gate is decreased to zero, the electric field between the source and drain will be removed and therefore the current flow between the two terminals will be again reduced.

STH290N4F6-2 provides excellent performance in terms of on-resistance and it is suitable for use in low voltage operations, thereby providing very low power dissipation. This device is resistant to electrostatic discharge and it is pre-biased in preparation for operation with a low gate current. Due to its wide range of applications, this device is suitable for many applications.

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