Allicdata Part #: | 497-13873-2-ND |
Manufacturer Part#: |
STH270N8F7-2 |
Price: | $ 3.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 80V 180A H2PAK-2 |
More Detail: | N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H²... |
DataSheet: | STH270N8F7-2 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 2.79632 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab) Variant |
Supplier Device Package: | H²PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 315W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13600pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 193nC @ 10V |
Series: | DeepGATE™, STripFET™ VII |
Rds On (Max) @ Id, Vgs: | 2.1 mOhm @ 90A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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IntroductionThe STH270N8F7-2 is a single high-efficiency Field Effect Transistor (FET). It is designed to provide increased power efficiency, higher power dissipation and voltage control. The STH270N8F7-2 is identified by a white body and a single-ended common source configuration with a package size of just 8 x 8 mm. This product is designed to provide better than standard rated performance when used in transistorized signal processing, power and industrial applications.
Performance
The STH270N8F7-2 is a high performance device with superior efficiency in power switching applications. It has a guaranteed Drain-Source current of 1A, along with a guaranteed breakdown voltage of 300V, both of which make it suitable for use in a wide range of switching applications. Additionally, the STH270N8F7-2’s low power dissipation and high frequency response enable superior signal performance. The device’s 8-pin package allows for easy installation and simple wiring without the need for an external heatsink and its high power density ensures it can handle over 100 watts of power, offering great performance for applications that require high power dissipation.
Uses and Applications
The STH270N8F7-2 is a very versatile device and can be used in a variety of applications. Its high frequency response makes it suitable for use in transistorized signal processing, while its low power dissipation and high power density make it suitable for power and industrial applications. It is ideal for use as a switch in switching power supplies, a motor driver, a relay replacement and other power related applications. Additionally, its high power dissipation capability makes it suitable for use in high-power audio- and video-related applications.
Working Principle
The STH270N8F7-2 is a Field Effect Transistor (FET) that works on the principle of field effect. When a voltage is applied across the gate and source terminals of the device, the electrons move from the gate to the source, creating an electric field that acts on the device. This electric field acts to modify the current flow between the device’s source and drain terminals. This current flow is easily controlled by the voltage applied across the device’s gate and source terminals. Additionally, the device can be used as an amplifier or switch, with the current synthesized by the voltage, allowing for precise control of current flow.
Advantages
The STH270N8F7-2 offers many advantages over other transistors. Firstly, its small form factor makes it very easy to install and Wire. This also enables it to reduce space requirements for applications that utilize it. Additionally, its high performance, high frequency response and low power dissipation ensure excellent signal and power performance. Finally, its package allows for easy cooling and its high power density ensures it can handle large amounts of power without the need for an external heatsink.
Conclusion
The STH270N8F7-2 is a single high-efficiency Field Effect Transistor (FET). It is designed to provide increased power efficiency, higher power dissipation and voltage control, and is suitable for a variety of applications. Its small form factor and easy installation make it convenient to use, while its high performance and low power dissipation ensure excellent operation. Finally, its high power density allows it to handle over 100 watts of power, making it an ideal solution for power and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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