STH275N8F7-6AG

The STH275N8F7-6AG is part of a family of Advanced High Power Single N-Channel MOSFETs within the STMicroelectronics product portfolio. This specific MOSFET is a through-hole component, based on STMicroelectronics’ Advanced Power MOSFET (APM) technology, with a 2.8a current rating and a 1.6V breakdown voltage.

The STH275N8F7-6AG is designed for applications such as: power conversion and regulation, audio amplifiers, DC/DC converters, AC/DC converters and boost converters. It has an insulated mounting tab and it is a lead (Pb)-free component.

In terms of its structure and working principle, the STH275N8F7-6AG belongs to the family of FETs, more specifically MOSFETs (metal-oxide-semiconductor field-effect transistors). It is a three-terminal active component, composed of a body, a source, and a drain. When a voltage is applied to the Gate/source terminal, a current is let to flow through the drain and source terminals. The Gate/source terminal acts as a switch and controls the current let through the drain and source terminals.

The working principle of this MOSFET is that of an insulated-gate field-effect transistor (IGFET). An IGFET consists of a channel between the source and the drain, this channel is composed of a semiconductor material and is insulated from the Gate/source terminal by a thin layer of metal oxide. This channel has a certain resistivity (R) to electric current and its value is determined by the voltage applied to the Gate/source terminal. When this voltage is high, current will flow easily through the channel. This voltage is called the threshold voltage (V_th) and it needs to be surpassed in order to allow the electric current to flow through the MOSFET.

The two other important parameters of a MOSFET are the On-state resistance (R_on) and the On-state current (I_d), these two parameters can be used to calculate the maximum power that can be handled by the MOSFET. The maximum power is reduced as the On-state resistance increases and as the On-state current decreases.

The STH275N8F7-6AG is a high power MOSFET designed for use in high power applications such as power conversion and regulation, audio amplifiers, DC/DC converters, AC/DC converters, and boost converters. It is composed of an insulated Gate/source terminal, a body, a source and a drain, and it works by controlling the current that flows through the source and drain terminals. Its On-state resistance and On-state current parameters can be used to determine the maximum power that can be handled by this MOSFET in different applications.