STH250N6F3-6 Allicdata Electronics
Allicdata Part #:

497-11842-2-ND

Manufacturer Part#:

STH250N6F3-6

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 60V 250A H2PAK
More Detail: MOSFET N-CH 60V 250A H2PAK
DataSheet: STH250N6F3-6 datasheetSTH250N6F3-6 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: --
Technology: --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: --
Supplier Device Package: --
Package / Case: --
Description

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The STH250N6F3-6 is a N-channel enhancement mode (normally-off) power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is the most popular electronic switching device and the most commonly used type of transistor in industrial and hobbyist electronics applications, due to its advantage of being able to provide extremely high switching speeds and low compression losses. This makes it an ideal choice for a high-power, high frequency circuit. The STH250N6F3-6 is especially well-suited to applications such as motor control, UPS systems, high frequency power converters, and high speed switching applications.

The STH250N6F3-6 is a very powerful MOSFET with a low on-resistance RDSON of 250mΩ. It has a maximum drain source voltage VDS of 600V and a gate source voltage VGS of ±15V. It can tolerate a maximum drain current of 12A and is capable of delivering a maximum power dissipation rating PD of 140W. The device also has an excellent threshold voltage of 2V.

The STH250N6F3-6 produces its switching action thanks to its depletion region. This is an area between its source and drain junctions where the transistor is turned on and operates as a switch to connect or disconnect the load. When the gate voltage VGS is applied, it forms a gate-source depletion region that attracts charge carriers and completely depletes the channel of any electrons. This insures that no current flows through the transistor. When the gate voltage VGS is increased to greater than the threshold voltage VTH, the depletion region further increases and removes more charge carriers from the channel, thereby allowing current to flow from source to drain.

The main application fields of the STH250N6F3-6 include high-frequency DC to AC converters and frequency converters, motor drives, power supplies, UPS systems, and other power management applications. It is ideal for use with IGBTs, as it provides an excellent combination of features for high-speed switching applications. In these applications, the MOSFET is able to control the current and voltage flow with accurate timing and switching speed.

In summary, the STH250N6F3-6 is an N-channel enhancement mode MOSFET with a low on-resistance RDSON. Its most common application fields are in motor control, UPS systems, frequency converters, DC to AC converters and high-speed switching applications. Its excellent features, such as its high switching speed and low compression losses, make it an ideal choice for these types of applications.

The specific data is subject to PDF, and the above content is for reference

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