STP11N60DM2

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The STP11N60DM2 is a N-channel MOSFET that belongs in the family of single transistors and field-effect transistors (FETs). Not only is it a supremely powerful device but it also offers outstanding electrical performance and durability, making it an ideal choice for a wide range of applications.

These devices are highly versatile and are suitable for a variety of power applications ranging from power management and motor control in industrial applications to AC-DC and DC-DC power conversion, such as found in televisions, LCD monitors, and other consumer electronics.

The STP11N60DM2 is optimised for low on-resistance and fast switching speeds, with the impressive on-resistance levels ranging from 0.43 ohms to 0.12 ohms at 10V and from 0.32 ohms to 0.078 ohms at 30V. This excellent switching speed makes the device ideal for use in high-current applications, including those where gate charge is an issue.

The STP11N60DM2 features a built-in energy efficient integrated body diode, which helps to reduce switching losses. This diode can handle forward current up to 18A, providing continuous conduction mode. This means that the device is able to operate in environments with high charging current and high voltage, and still provide optimum efficiency.

The STP11N60DM2 also has an extremely low gate threshold voltage and is able to switch on almost immediately, making it suitable for applications where power savings and response times are a priority. The device is also active when powered and can be used as part of a mixed load, such as power control and standby power supplies, while still providing the high performance needed.

In addition to its impressive performance, the STP11N60DM2 also offers superior durability and reliability. These devices have been designed to have an exceptionally high temperature cycling capability, and are insulated by the package. As a result, the device can withstand high temperature fluctuations, up to 150°C, without compromising performance.

The working principle behind the STP11N60DM2 is equally impressive. The device is a voltage controlled switch, meaning that when a voltage is applied, the gate current is able to control the switching of the device. When the current is high enough, the device is turned on and current is allowed to flow from source to drain. Conversely, when the gate current is stopped, the device is then turned off and no current can flow.

This voltage control allows for smoother transitions and superior performance, due to the stability and control that can be achieved through the gate voltage. When compared to traditional bipolar transistors, the STP11N60DM2 is able to maintain constant parameters and is less prone to variation in conditions, making it an ideal choice for applications where reliability is required.

The STP11N60DM2 is a powerful and reliable device, making it an ideal choice for a wide range of applications that require high performance and reliability. With its low resistance levels and fast switching speeds, this device is capable of providing superior performance in both industrial and consumer electronics applications.

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