STP120N4F6

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STP120N4F6 is a N-channel MOSFET transistor which consists of a drain, source and gate. It is an insulated gate type device and is commonly used for power switching applications. It is often used in high speed switching, high voltage and power control applications due to its low on-state resistance, low gate-source capacitance and low threshold voltage.

The STP120N4F6 is manufactured by STMicroelectronics and features a drain-source voltage rating of 120V (VDSS) and a drain current rating of 28A (ID) with a maximum power dissipation of 200W. It is available in the TO-220 package.

The application field and working principle of STP120N4F6 can be outlined in two parts.

Application

The STP120N4F6 is mainly used in DC power switching applications, such as motor control, DC-DC converters, and motor drive circuits. Additionally, it is also used in automotive applications, particularly driver and power switching applications. The low on-state resistance of the device makes it suitable for high switching frequency operation, which enables the designers to keep the size of the control circuit small.

Working Principle

The STP120N4F6 is a voltage-controlled device. When a voltage is applied between the gate and source terminals, the drain current is controlled based on the voltage difference between these two terminals. In an N-channel device, the gate-source voltage must be positive in order to establish a path from the source to the drain, thus allowing the current to flow from the source to the drain.

The STP120N4F6 also has a back gate terminal, which can be used to increase the turn-off speed. When the back gate is activated, the device turns off much faster and more efficiently. This is usually done by connecting the back gate to the source to ground.

Lastly, the STP120N4F6 has an internal body diode, which is always present in FET devices. This diode is used as a protection mechanism when the device is in an overvoltage or over-current condition. The body diode limits the current flow by providing a bypass path to the drain.

In conclusion, the STP120N4F6 is a versatile N-channel MOSFET transistor which is used in many different fields and applications. Its excellent performance and low on-state resistance make it suitable for high voltage and power control applications. Additionally, it has a back gate terminal which can be used to increase the turn-off speed. Its internal body diode provides protection for the device against overvoltage and over-current conditions.

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