![STP16N65M5 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 497-8788-5-ND |
Manufacturer Part#: |
STP16N65M5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 12A TO-220 |
More Detail: | N-Channel 650V 12A (Tc) 90W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 605 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 299 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP16N65M5 is an N-channel copper-based vertically double-diffused metal-oxide-semiconductor field-effect transistor (DMOS) designed with an optimized layout that offers superior R(DS)(ON) ratings and fast body diode switching. This device is particularly well-suited for motor control applications. Its vertical construction provides high power dissipation and low power switching loss. This device is fast switching and has a low thermal resistance of 0.7K/W.
The STP16N65M5 has a basic structure formed by a bulk N-region, a source region and a drain region, all of which are disposed in a planar surface. The bulk N-region, also known as the body, forms the main conduction path of the circuit and has a single connection. The source and drain regions are isolated from the body and connected to separate terminals. A gate region is positioned between the source and drain regions, and is isolated from them. An electric field is generated across the gate and through the body when a voltage is applied. This electric field controls the current flowing through the body and across the source and drain regions.
The STP16N65M5 is primarily used for power management in motor control applications. It is well suited for 48V battery modules, wind turbine speed controls, LED drivers, motor control applications, and high power audio amplifiers. The STP16N65M5 is also capable of operating at higher temperatures and in harsh environments, which makes it perfect for portable devices and appliances.
The STP16N65M5 features low switching loss through its fast switching capability and can operate at a maximum junction temperature of 175C. It also has a drain source voltage rating of 650V, making it ideal for high power applications. The device can handle 8A of continuous drain current and 16A of pulsed current, and is protected against high energy pulses through its over-current protection circuit. The device also features inrush and over-voltage protection.
The STP16N65M5 has a wide range of application fields and its working principle can be explained in terms of its structure and internal components. Its basic structure is composed of a bulk N-region, a source region and a drain region, all of which are disposed in a planar surface. An electric field is generated across the gate and through the body when a voltage is applied, controlling the current flowing through the body and across the source and drain regions. The STP16N65M5 is primarily used for power management in motor control applications and can handle 8A of continuous drain current and 16A of pulsed current, making it ideal for high power applications. Its fast switching capability and low switching loss makes it perfect for applications in harsh environments and portable devices.
The specific data is subject to PDF, and the above content is for reference
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