Allicdata Part #: | 497-2787-5-ND |
Manufacturer Part#: |
STP50NE08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 80V 50A TO-220 |
More Detail: | N-Channel 80V 50A (Tc) 150W (Tc) Through Hole TO-2... |
DataSheet: | STP50NE08 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5100pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 150W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
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The STP50NE08 is a 50-volt, 8A, logic-level N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for advanced high-efficiency, low-loss switching applications. It is a single, monolithic device optimized for power synchronized systems, offering excellent performance, low on-resistance and low gate charge, making it ideal for a wide range of applications. The STP50NE08 offers very low on-resistance, very low gate charge, fast switching speed and ease of paralleling multiple devices for increased current capacity. It is suitable for powerstage applications, like hot switching in electric vehicles, DC-DC converters, low-voltage POL (Point-Of- Load) converters, battery-powered systems and in standard AC-DC power supplies.
The STP50NE08 incorporates advanced design concepts, resulting in a device that is more rugged than traditional MOSFETs, but with a significantly lower on-resistance. With high switching speed and low capacitance, the STP50NE08 is designed to minimize power losses, resulting in high efficiency, high power density and high power conversion efficiency. It is capable of handling high continuous currents and high peak currents with minimal de-rating. The device supports operation with both 100% Pb-free and lead-containing reflow soldering processes.
The STP50NE08 uses a junction gate structure to create a symmetric, low on-resistance path between source and drain. By eliminating the need for a drain-source resistance and creating a low-resistance path between source and drain, the STP50NE08 can operate at much higher frequencies than traditional MOSFETs. The STP50NE08 also features a low gate capacitance to minimize gate charge, reducing switching times and improving efficiency.
The STP50NE08 is designed for use in automotive power conversion systems, DC-DC converters, and other applications requiring high-efficiency and low-loss switching. It can support a wide range of voltage and current ratings, and its low on-resistance and gate charge reduce power dissipation and make it suitable for high-efficiency synchronous systems. The STP50NE08 is also suitable for low-voltage POL converters, battery-powered systems, and standard AC-DC power supplies.
In short, the STP50NE08 is an 8A, 50V rated monolithic N-channel MOSFET, specifically designed for advanced high-efficiency, low-loss switching applications such as automotive power conversion systems, DC-DC converters, and other applications requiring high-efficiency and low-loss switching. It features a low on-resistance and gate charge, fast switching speeds and ease of paralleling multiple devices for increased current capacity, making it highly suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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