Allicdata Part #: | STP52P3LLH6-ND |
Manufacturer Part#: |
STP52P3LLH6 |
Price: | $ 0.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CHANNEL 30V 52A TO220 |
More Detail: | N-Channel 30V 52A (Tc) 70W (Tc) Through Hole TO-22... |
DataSheet: | STP52P3LLH6 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.45644 |
Rds On (Max) @ Id, Vgs: | -- |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Vgs (Max): | -- |
Vgs(th) (Max) @ Id: | -- |
Series: | STripFET™ H6 |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 52A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP52P3LLH6 is a silicon N-channel enhancement-mode logic level field-effect transistor belonging to the single MOSFET category. It is designed to facilitate high-speed switching and can be used in different applications such as switching regulators, converters, and motor drivers.
When the external voltage applied to the gate terminal is higher than the threshold voltage, the MOSFET turns on, and when it is lower, the MOSFET turns off. This is the basic concept of the MOSFET working principle. In the case of the STP52P3LLH6, its maximum drain current at 25°C (77°F) is defined by the on-state resistance of the channel as 19.5 A.
The STP52P3LLH6 is optimized for low-impedance applications, which is achieved through its high speed, low threshold voltage of 1.3 V, and low gate-to-source capacitance of 50.2 pF. Its low gate-source voltage threshold allows it to keep the device on with minimal power and also allows it to be used in applications where high power is required. For example, it can be used as switching regulators, converters, motor drivers, and other applications where low to high voltage conversion is necessary.
The STP52P3LLH6 also has a low on-state resistance of 132 mΩ, which allows for better control of the power dissipation and lower losses. This makes this device ideal for applications where power efficiency is desired. Furthermore, its Lightning Surge Immunity Specification of 1.0 kV guarantees compatibility with most industrial standards and makes this device suitable for automotive, medical, and industrial applications.
The STP52P3LLH6 is also very robust with an avalanche ruggedness of 1.4 mJ and a maximum drain source breakdown voltage of 55 V. These features make this device extremely robust and reliable. Lastly, this device has an excellent thermal stability, with a junction-to-case thermal resistance of 0.75 °C/W. This enables the device to be used in applications where temperatures can reach up to 150°C.
In conclusion, the STP52P3LLH6 is an ideal choice for applications that require high speed switching and excellent power efficiency. With its low threshold voltage, low resistance, and high surge immunity, this device can be used for many different applications, such as switching regulators, converters, and motor drivers.
The specific data is subject to PDF, and the above content is for reference
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