Allicdata Part #: | 497-13113-5-ND |
Manufacturer Part#: |
STP57N65M5 |
Price: | $ 8.45 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 42A TO-220 |
More Detail: | N-Channel 650V 42A (Tc) 250W (Tc) Through Hole TO-... |
DataSheet: | STP57N65M5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 7.67970 |
50 +: | $ 6.29735 |
100 +: | $ 5.68298 |
500 +: | $ 4.76141 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 98nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 63 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STP57N65M5 is a product from STMicroelectronics, an Italian semiconductor manufacturer. It is a N-channel power MOSFET, designed to offer high performance in a small 3-pin PowerFLAT 5x6 SMD package. This MOSFET is particularly suited for use in power management applications such as motor-control, switching supplies and high-performance reverse battery protection.
MOSFET stands for Metal Oxide Semiconductor Field-Effect Transistor. It is a type of transistor that operates by utilizing an electric field to control the flow of current between two electrodes, the source and the drain. In the MOSFET, the gate electrode is insulated from the other two electrodes. Through this insulation, the MOSFET can be used to control the current flow between the two other electrodes. It acts as an electronic switch, allowing the current to flow when a voltage difference is applied between the gate and the source, while blocking the current if the voltage difference between the two electrodes is removed.
STP57N65M5 is an N-channel MOSFET, which means it utilizes an n-type semiconductor as the gate electrode. The n-type semiconductor material is composed of negatively charged carriers, and when voltage is applied to the gate electrode, it creates an electric field across the semiconductor material from the source to the drain. This electric field works to repel electrons in the n-type semiconductor material, allowing them to flow through the MOSFET and create a current between the source and the drain. The stronger the electric field, the greater the current flow will be.
The STP57N65M5 offers a wide range of features that make it suitable for a variety of applications. It has a very low on-resistance, which means it can handle large currents while requiring low voltage levels. It also has a fast switching speed, which is beneficial in applications where low noise is required. Additionally, it has a high operating temperature rating, which makes it suitable for high-temperature environments.
It is also worth noting that the STP57N65M5 also has a high level of immunity against electrostatic discharge, which makes it suitable for use in industrial and automotive environments. Additionally, it is also capable of withstanding high levels of surge currents, making it suitable for use in motor-control applications.
The STP57N65M5 is a versatile and reliable MOSFET that can be used in a wide range of applications, from motor-control and switching supplies to high-performance reverse battery protection. This is all possible due to the combination of its low on-resistance, fast switching speed, high operating temperature rating and high immunity to electrostatic discharge, as well as its capability of withstanding high levels of surge currents. As such, the STP57N65M5 is an excellent choice for a wide variety of power management applications in industrial, automotive and consumer products.
The specific data is subject to PDF, and the above content is for reference
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