STP5N120

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The STP5N120 is a N-Channel power MOSFET which is widely used for a variety of applications due to its low resistance levels and high current carrying capacity. This MOSFET boasts the lowest on-state resistance (RDS) of any other similar MOSFET of its size and was designed mainly for high current and high switching frequency applications. The STP5N120 is not only capable of being used as a general power switch transistor, but also for RF power amplifiers and higher power switching applications.

The STP5N120 is a vertical D-MOSFET, also known as a surface mount power MOSFET. It consists of an N-channel of vertical MOSFETs which are placed on a single monolithic substrate made of a semiconductor material. The STP5N120 is mainly used in applications that require power MOSFETs with low on-state resistance. The STP5N120 also has a very fast switching speed, which makes it suitable for higher power applications that require switching frequencies up to 150kHz.

In terms of physical characteristics, the STP5N120 is a surface mountable N-channel MOSFET with a package size of 4.99mm by 12.5mm. It has an absolute maximum drain current of 120A. The actual on-state resistance at a drain current of 10A is 7.8mOhm. The gate-source voltage (VGS) of the MOSFET is 20V, and its peak pulse power dissipation is 590W at a junction temperature of 25°C.

The STP5N120 works on the principle of metal-oxide-semiconductor field-effect transistors (MOSFET) - a transistor that utilizes an MOSFET element as the main conducting channel. MOSFETs work by using the gate-source voltage (VGS) to control the current which passes through the channel when a voltage is applied between the drain and source terminals. When a positive voltage is applied to the gate terminal of the MOSFET, this turns the MOSFET ON, allowing current to flow from the drain to the source terminal. When the voltage is reversed, the current flow is blocked, and the transistor is OFF.

In the case of the STP5N120, its MOSFET is capable of withstanding high voltage conditions and is capable of conducting high current at low drain-source voltages. This makes it suitable for applications such as SMPS (switched mode power supplies), motor control, and HVDC systems. It is also suitable for RF power amplifiers, due to its high speed switching capability.

Overall, the STP5N120 is a versatile MOSFET that can be used in a wide range of applications due to its low on-state resistance and high current capacity. It is ideal for higher power applications that require high switching frequency and rugged operation in harsh environments.

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