STP5NB40

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	80W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	405pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Series:	PowerMESH™
Rds On (Max) @ Id, Vgs:	1.8 Ohm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.7A (Tc)
Drain to Source Voltage (Vdss):	400V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction The STP5NB40 is a power MOSFET that is used in many areas including circuits using microprocessors and other digital logic. It is a power MOSFET with an enhanced gate oxide, resulting in superior performance. It can be made to switch high or low currents and has the ability to withstand over-voltage and dynamic loading. Application field The STP5NB40 is a reliable, high performance power MOSFET which can be used in many different applications due to its superior performance and dynamic loading capabilities. It is most commonly used in low voltage switching applications, such as motor speed controllers, inverters, power converters, and motor control systems. It can also be used in audio processing devices, lighting systems, and switching applications for AC and DC loads. Working Principle A MOSFET is an abbreviation for metal-oxide-semiconductor field-effect transistor. It consists of a metal gate electrode that is separated from a semiconductor substrate by an oxide layer. It is a type of field-effect transistor used to control current through a circuit. The basic operation of a MOSFET is based on the ability of a metal electrode to affect the conductivity of the semiconductor substrate. The metal gate electrode controls the conductivity of the substrate which is determined by the electric field between the metal gate electrode and the substrate. The STP5NB40 is a power MOSFET with enhanced gate oxide which provides superior performance while achieving high current drive capability. When a voltage is applied at the gate, a channel is created in the semiconductor substrate which allows current to flow between the drain and source of the MOSFET. The amount of current that can be controlled with the MOSFET depends on the voltage applied to the gate. Saturation of STP5NB40In an ideal scenario, the MOSFET is in the saturation region which occurs when the voltage applied to the gate is greater than the substrate threshold voltage and the current between the drain and source is at its maximum. This occurs when the MOSFET is in the “ON” state and current flows through the channel freely.Switching of STP5NB40The MOSFET is also used in switching applications. When a low voltage is applied to the gate, the substrate channel is off and the current between the drain and source is blocked. When a high voltage is applied, the substrate channel is turned on and current is allowed to flow. This is a useful feature when controlling motors, DC loads, AC loads, audio signals, and other types of equipment.Safety mechanismThe STP5NB40 is designed with a safety feature that helps protect the MOSFET from over-voltage and dynamic loading. When the voltage applied to the gate exceeds the threshold voltage of the substrate, the MOSFET enters into the "linear region" which reduces the current between the drain and source and helps protect the MOSFET from damage. Conclusion The STP5NB40 is a reliable and high-performance power MOSFET which can be used in many different applications. It is designed to withstand over-voltage and dynamic loading, and the enhanced gate oxide provides superior performance. The STP5NB40 can be used in low voltage switching applications, audio processing devices, lighting systems, motor speed controllers, inverters, power converters, and other applications.

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