STP5N95K3

Vgs(th) (Max) @ Id:	5V @ 100µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	90W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	460pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 10V
Series:	SuperMESH3™
Rds On (Max) @ Id, Vgs:	3.5 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drain to Source Voltage (Vdss):	950V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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STP5N95K3 Application Field and Working Principle

STP5N95K3 are n-channel power field-effect transistors (FETs) with excellent power dissipation and drain-source breakdown-voltage ratings. This series is constructed with N-channel as well as P-channel Enhancement-mode silicon-gate power FETs.\' STP5N95K3\'s can be used in a variety of power applications such as power management, motor control, and high-speed switching applications. This series is highly efficient, low-cost and provides excellent performance.

Application field

STP5N95K3 is suitable for use in high power logic circuits requiring high voltage and current drive capability. It is especially well suited for applications such as DC/AC inverters, power amplifiers, power switching, motor controls, HVAC systems, and power supply circuits. In addition, its low RDS(on) and fast switching times make it suitable for use in switch-mode power supplies.

Working Principle

At the heart of any FET is a two terminal gate and two electrodes, called the source and the drain. A voltage is applied between the gate and the source, which controls the flow of current between the source and the drain. When the gate and source are at the same electrical potential, the flow of current is blocked; however, when a voltage difference exists between them, current can flow between the source and the drain.The functioning of the STP5N95K3 is based on a gate-controlled, fully-enhanced FET (Field Effect Transistor). In this configuration, the FET operates as an voltage-controlled resistor, with the resistance controlled by the input voltage at the gate pin. When the gate voltage is low, current will flow from the source to the drain and the FET acts like a resistor. When the gate voltage is high, the resistance between the source and the drain will be reduced and the current will increase. This characteristic makes the STP5N95K3 ideal for applications such as power switching, high-speed switching, motor control and power supply circuits.The STP5N95K3 is also capable of high frequency operation and can be used in applications such as RF amplifiers, switching circuits and high frequency power supplies. These devices operate at frequencies up to 200 MHz, depending on the application.The STP5N95K3 is also suitable for applications where a low power dissipation is needed, such as battery-powered applications. This makes it ideal for use in portable electronic devices.

Conclusion

The STP5N95K3 is an excellent choice for power device applications due to its low RDS(on), fast switching times and high voltage and current thumb ratings. It is also highly efficient and low cost, making it suitable for a variety of power management, motor control and high-speed switching applications. In addition, its high frequency operation makes it suitable for use in RF amplifiers and high frequency power supplies. Its low power dissipation makes it suitable for battery-powered applications as well.

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