Allicdata Part #: | 497-4382-5-ND |
Manufacturer Part#: |
STP5NK100Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 1KV 3.5A TO-220 |
More Detail: | N-Channel 1000V 3.5A (Tc) 125W (Tc) Through Hole T... |
DataSheet: | STP5NK100Z Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1154pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 10V |
Series: | SuperMESH3™ |
Rds On (Max) @ Id, Vgs: | 3.7 Ohm @ 1.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP5NK100Z is a transistor in the field effect transistor (FET) family, typically used as a switch or amplifier in circuits. It is a three-terminal device with a wide bandgap and low threshold voltage, enabling high-speed switching, fast response times and low power consumption. In order to better understand the field of application and working principle of the STP5NK100Z transistor, it is important to first look at the anatomy of a FET.
A FET is a type of semiconductor device made up of two sets of electrodes. These are the source and drain, which control the flow of electrical current, and the gate which modulates the current. FETs have a lower input impedance than bipolar transistors, making them well suited to applications that require higher levels of current for switching. FETs are also more efficient than bipolar transistors, meaning that they can operate at higher frequencies.
The STP5NK100Z is a N-channel enhancement mode FET. It is a single-gate transistor, meaning that it has only one gate controlling the flow of current. This makes it ideal for applications such as level shifting, power management and signal conditioning. The STP5NK100Z also has a robust technology platform that is tolerant to harsh environmental conditions such as temperature and humidity, making it suitable for use in military and aerospace applications.
The STP5NK100Z has a wide bandgap and low threshold voltage, which contributes to its low on-state resistance of 1.2Ω. This, in turn, enables high-speed switching and fast response times, as well as low power consumption. It also exhibits a wide range of operation gate-source voltages, making it suitable for use in a variety of applications, from high-frequency switching to low-voltage analog circuits.
The STP5NK100Z is also characterized by a low input capacitance, which makes it well suited for use in high-speed switch-mode power supplies and amplifiers. Its wide bandgap and low threshold voltage also make it ideal for applications where high-frequency operation is required, such as dc/dc converters, motor drive applications and digital signal processing systems.
The STP5NK100Z works on the principle of voltage-controlled current conduction. It uses the gate-source voltage to regulate the flow of current between the source and drain. It is this principle that enables the transistor to control power, amplify signals and switch between a high and low state. This type of switching is called enhancement mode, as the STP5NK100Z is able to increase current conduction when the gate-source voltage is increased.
In conclusion, the STP5NK100Z is a single-gate FET transistor that has a wide bandgap and low threshold voltage, making it well suited for high speed switching and low power consumption. It has a low input capacitance and is tolerant to harsh environmental conditions, allowing it to be used in a wide range of applications from military and aerospace to dc/dc converters and power management.
The specific data is subject to PDF, and the above content is for reference
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