Allicdata Part #: | 497-14282-5-ND |
Manufacturer Part#: |
STP5N60M2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 3.7A TO220 |
More Detail: | N-Channel 600V 3.7A (Tc) 45W (Tc) Through Hole TO-... |
DataSheet: | STP5N60M2 Datasheet/PDF |
Quantity: | 873 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 165pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 4.5nC @ 10V |
Series: | MDmesh™ II Plus |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 1.85A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STP5N60M2 Application Field and Working Principle
The STP5N60M2 is a high-voltage, high-speed, N-channel MOSFET transistor. It is used extensively in power supplies and motor control circuits, and is well-suited for applications that need to withstand large reverse-drain voltages. This article will discuss the application field and working principle of this MOSFET.
Application Field
The STP5N60M2 can be used in a wide range of applications, including:
- Motor control circuits
- Switching power supplies
- Audio amplifiers
- Battery chargers
- Lighting control circuits
- DC-DC converters
- Low-noise, high-efficiency power supply designs
In power supplies and motor control circuits, this MOSFET is especially useful because of its ability to withstand large reverse-drain voltages. Additionally, the STP5N60M2 offers low on-resistance, meaning it can dissipate less power when switched on and consequently operates at higher efficiency.
Working Principle
In basic terms, a MOSFET transistor works by using an electric field to control the flow of current between two terminals. Specifically, the STP5N60M2 utilizes an N-channel MOSFET structure, meaning a channel is formed within its body from a source to a drain terminal.
When the gate-source voltage (VGS) is above a certain threshold, the electric field between the source and drain terminals produces a conduction channel. Current is then allowed to flow from the source to the drain terminal in proportion to the voltage applied to the gate terminal. The higher the VGS, the larger the diameter of the conduction channel, which results in a lower on-resistance. This is why the STP5N60M2 is able to dissipate less power when switched on and operate at higher efficiency.
Once the gate-source voltage is reduced to a level that is below the threshold value, the MOSFET is switched off and current flow is blocked. The wide range of VGS thresholds offered by the STP5N60M2 is particularly useful in applications that require precise control.
Conclusion
The STP5N60M2 is a high-voltage, high-speed, N-channel MOSFET transistor that is used extensively in power supplies and motor control circuits. It is able to withstand large reverse-drain voltages, offer low on-resistance, and provide a wide range of VGS thresholds. This makes it an excellent choice for applications that need precise control and high efficiency.
The specific data is subject to PDF, and the above content is for reference
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